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Strain Measurements of Sigec Heteroepitaxial Layers On Si(100) Using Ion Beam Analysis+

Published online by Cambridge University Press:  21 February 2011

S. Sego ,
R. J. Culbertson ,
P. Ye ,
S. Hearne ,
J. Xiang ,
N. Herbots ,
Z. Atzmon  and
A.E. Bair
S. Sego
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ.
R. J. Culbertson
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ.
P. Ye
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ.
S. Hearne
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ.
J. Xiang
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ.
N. Herbots
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ.
Z. Atzmon
Affiliation:
Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ.
A.E. Bair
Affiliation:
Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ.
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Abstract

The strain in SiGeC heteroepitaxial films grown on Si(100) substrates has been quantified using ion channeling. The films were grown both by combined ion beam and molecular beam epitaxy (CIMD) and chemical vapor deposition (CVD). Rutherford backscattering spectrometry (RBS) was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the carbon concentration, and ion channeling was utilized to measure film quality. Channeling angular scans across an off normal major axis were used to quantify the strain. Part of the film was removed by using a solution of HF, HN03 and CH3COOH in order to obtain a reliable scan in the substrate. The results indicate that C may be compensating for the strain introduced by Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 461
Copyright
Copyright © Materials Research Society 1995

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Footnotes

+

Supported by AFOSR (ARPA), contract F49620-93-C-0081.

References

1 Kasper, E., Herzog, H. J., and Kibble, H., Appl. Phys. 8,199 (1975); E. Kasper and J. J. Herzog, Thin Solid Films 44, 357 (1977).Google Scholar
2 Fiory, A. T., Bean, J. C., Feldman, L.C., and Robinson, I. K., J. Appl Phys. 56 (4), 1227 (1984).Google Scholar
3 Nagatomo, M., Ishiwara, H. and Furukawa, S., Japanese J. Appl Phys. 18 (4), 765 (1979).Google Scholar
4 Soref, R. F., J. Appl. Phys. 70,2470 (1991).Google Scholar
5 Ye, P., presented at the 1994 AVS Fall Meeting, Denver, CO, 1994 (unpublished).Google Scholar
6 Atzmon, Z., Bair, A. E., Jaquez, E. J. Mayer, J. W., Chandrasekhar, D., Smith, D. J., Hervig, R. L., and Robinson, McD. (unpublished).Google Scholar
7 Doolittle, L. R., Nucl. Instrum. Methods B 9,344 (1985).Google Scholar
8 Picraux, S. T., Dawson, L. R., Osbourn, G. C., and Biefeld, R. M., Appl. Phys. Lett. 43 (11),1020(1983).Google Scholar
9 Robbins, H. and Schwartz, B., Chemical Etching for Silicon II, the System HF, HNO3, H2O, and HC2H3O2 J. Electrochem. Soc., 107, 108 (1960).Google Scholar
10 Picraux, S. T., Dawson, R. L., Osbourn, G. C., and Chu, W. K., Appl. Phys. Lett. 43,930 (1983).Google Scholar
11 Van der Merwe, J. H., J. Appl. Phys. 34,123 (1962).Google Scholar
12 Ball, C. A. and Van der Merwe, J. H., in Dislocations in Solids, edited by Nabarro, F. R. N. (North-Holland, Amsterdam, 1983), p. 123.Google Scholar
13 Mea, Delia et al. in Atomic Collisions in Solids, edited by Datz, S., Appleton, B. R., and Moak, C. D. ( vol 2, Plenum, New York, 1975) p. 811.Google Scholar
14 Hornstra, J. and Bartels, W. J., J. Cryst. Growth 44,513 (1978).Google Scholar
15 Dismukes, J. P., Ekstrom, L., and Paff, R. J., J. Phys. Chem. 68,3021 (1964).Google Scholar
16 Cave, N. (private communication).Google Scholar