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Stimulated Emission at 258 nm in AlN/AlGaN Quantum Wells Grown on Bulk AlN Substrates

Published online by Cambridge University Press:  01 February 2011

R. Gaska ,
Q. Fareed ,
G. Tamulaitis ,
I. Yilmaz ,
M.S. Shur ,
C. Chen ,
J. Yang ,
E. Kuokstis ,
A. Khan  and
J.C. Rojo
...Show all authors
R. Gaska
Affiliation:
Sensor Electronic Technology, Inc., Columbia, SC2909, U.S.A.
Q. Fareed
Affiliation:
Sensor Electronic Technology, Inc., Columbia, SC2909, U.S.A.
G. Tamulaitis
Affiliation:
Department of ECE and Broadband Center, RPI, Troy, NY 12180, U.S.A IMSAR, Vilnius University, Sauletekio 9-III, Vilnius, Lithuania
I. Yilmaz
Affiliation:
Department of ECE and Broadband Center, RPI, Troy, NY 12180, U.S.A
M.S. Shur
Affiliation:
Department of ECE and Broadband Center, RPI, Troy, NY 12180, U.S.A
C. Chen
Affiliation:
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
J. Yang
Affiliation:
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
E. Kuokstis
Affiliation:
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A. IMSAR, Vilnius University, Sauletekio 9-III, Vilnius, Lithuania
A. Khan
Affiliation:
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
J.C. Rojo
Affiliation:
Crystal IS, Inc., Latham, NY 12110, U.S.A.
L. J. Schowalter
Affiliation:
Crystal IS, Inc., Latham, NY 12110, U.S.A.
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Abstract

We report on observation of stimulated emission at 258 nm in AlN/AlGaN multiple quantum wells. The structures were grown over Al-face single crystal bulk AlN substrates. AlN/AlGaN structures with 50% of Al in the well material were grown using low-pressure metalorganic chemical vapour deposition. Characterization by using X-ray, AFM, SEM, and photoluminescence techniques indicated high structural quality of the structures. The stimulated emission was measured using the variable stripe length method under excitation by 4-ns-long pulses of the fifth harmonic of Nd:YAG laser radiation at 213 nm (5.82 eV). The stimulated emission exhibited a characteristic superlinear dependence of emission intensity on the pump intensity as well as an exponential increase of the sample-edge emission intensity with increasing stripe length up to ∼430 μm and the intensity saturation beyond this range. The observation of stimulated emission at 258 nm is very promising for the future development of III-nitride-based deep-UV laser diodes on bulk AlN substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C6.9
Copyright
Copyright © Materials Research Society 2003

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