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Steps on (001) Si Surfaces

Published online by Cambridge University Press:  28 February 2011

D. E. Aspnes  and
J. Ihm
D. E. Aspnes
Affiliation:
Bell Communications Research, Inc., Red Bank, N.J. 07701–7020
J. Ihm
Affiliation:
Physics Department, Seoul National University, Seoul, Korea
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Abstract

Primitive (001) surfaces contain only biatomic (ao/2) steps and thereby provide a topological way of suppressing antiphase domain formation in polar materials heteroepitaxially grown on nonpolar (001) substrates. We show that thermodynamic equilibrium is a necessary and sufficient condition to form primitive (001) Si surfaces due to a π-bonded step reconstruction that lowers the relative enthalpy of reconstructed [110] biatomic steps by 0.04 eV per step atom, and to correlation, which freezes out the step configurational entropy thereby suppressing the formation of all other types of steps. Implications for general vicinal (001) Si surfaces are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 45
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES:

1. Bringans, R. D., Olmstead, M. A., Uhrberg, R. I. G., and Bachrach, R. Z., in Proc. 18th Internat. Conf. Phys. Semicond. Stockholm, ed. Engstrom, O. (World Scientific, Singapore, 1987), p. 191.Google Scholar
2. Kroemer, H., J. Crystal Growth 8 193 (1987).Google Scholar
3. Pandey, K. C., Phys. Rev. Lett. 47 1913 (1981).Google Scholar
4. Aspnes, D. E. and Ihm, J., Phys. Rev. Lett. 57, 3054 (1986).Google Scholar
5. Chadi, D. J., Phys. Rev. Lett. 43, 43 (1979).Google Scholar
6. Ihm, J., Lee, D. H., Joannopoulos, J. D., and Xiong, J. J., Phys. Rev. Lett. 51 1872 (1983).Google Scholar
7. Aspnes, D. E. and Ihmn, J., J. Vac. Sci. Technol. (in press.)Google Scholar
8. Burton, W. K., Cabrera, N., and Frank, F. C., Phil. Trans. Roy. Soc. (London) A243, 299 (1951).Google Scholar
9. Chabal, Y. J. and Raghavachari, K., Phys. Rev. Lett. 5, 282 (1984).Google Scholar
10. Chabal, Y. J., Surface Science 168, 594 (1986).Google Scholar
11. Henzler, M. and Clabes, J., in Proc. 2nd Internat. Conf. on Solid Surfaces, Jpn. J. Appl. Phys., Suppl. 2, Pt. 2, 389 (1974).Google Scholar
12. Kaplan, R., Surface Sci. 93 145 (1980).Google Scholar
13. Sakamoto, T., Kawamura, T., and Hashiguchi, G., Appl. Phys. Lett. 48, 1612 (1986).Google Scholar
14. Bringans, R. D., Uhrberg, R. I. G., Olmstead, M. A., and Bachrach, R. Z, Phys. Rev. B 34 7447 (1986).Google Scholar
15. Akiyama, M., Kavarada, Y., Nishi, S., Ueda, T., and Kaminishi, K., in Heteroepitaxy on Silicon, Fan, J. C. C. and Poate, J. M., eds. (Mater. Res. Soc. Symp. Proc. 67, Pittsburgh, 1986), p. 53.Google Scholar
16. Ueda, T., Nishi, S., Kawarada, Y., Akiyama, M., and Kaminishi, K., J. Appl. Phys. Jpn. 25, L789 (1986).Google Scholar