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Stepped Gate Polysilicon Thin Film Transistor for Large Area Power Applications

Published online by Cambridge University Press:  10 February 2011

J. Aschenbeck ,
Y. Chen ,
F. Clough ,
Y. Z. Xu ,
E. M. Sankara Narayanan  and
W. I. Milne
J. Aschenbeck
Affiliation:
Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK
Y. Chen
Affiliation:
Department of Electrical Engineering & Electronics, University of Liverpool, UK
F. Clough
Affiliation:
Emerging Technologies Research Centre, De Montfort University, UK
Y. Z. Xu
Affiliation:
Emerging Technologies Research Centre, De Montfort University, UK
E. M. Sankara Narayanan
Affiliation:
Emerging Technologies Research Centre, De Montfort University, UK
W. I. Milne
Affiliation:
Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK
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Abstract

For the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 25
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Crossland, W., Davey, A. B., Sparks, A. P., Lee, M. J., Wright, S. W., Judge, C. P., SPIE LC Dev. & Mat., 1455, 264 (1991)Google Scholar
[2] Tanaka, K., Arai, H., Kohada, S., IEEE EDL, 9 (1), 23 (1988)Google Scholar
[3] Choi, D-H Sadayuki, E. Sugiura, O., Matsumura, M., Jpn. Journ. Of Appl. Phys., 30 (11B), p.3302 (1991)Google Scholar
[4] Huang, T.-Y., Wu, I.-W., Lewis, A. G., Chiang, A., Bruce, R. H., IEEE EDL, 11 (6), 244 (1990)Google Scholar
[5] Froggatt, M. W. D., Ph. D. Thesis, Cambridge (1998)Google Scholar
[6] Chen, Y., Ph. D. Thesis (1998)Google Scholar
[7] Hack, M. G., Lewis, A. G., Shaw, J. G., Journ. Non-cryst. Solids 137 & 138, 1229 (1991)Google Scholar
[8] Silvaco Atlas User's Manual, Version 1.5.0 (1997)Google Scholar
[9] Chen, Y., Clough, F. J., Madathil, S. N. Ekkanath, Eccleston, W., Milne, W. I., Electr. Soc. Proc. 96–23, p. 352 Google Scholar