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Steady-state and transient electron transport within bulk wurtzite zinc oxide and the resultant electron device performance

Published online by Cambridge University Press:  12 April 2013

Walid A. Hadi ,
Michael S. Shur  and
Stephen K. O’Leary
Walid A. Hadi
Affiliation:
Department of Electrical and Computer Engineering, University of Windsor, Windsor, Ontario, Canada N9B 3P4
Michael S. Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590, U.S.A.
Stephen K. O’Leary
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
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Abstract

We review some recent results related to the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. We employ three-valley Monte Carlo simulations of the electron transport within this material for the purposes of this analysis. Using these results, we devise a means of rendering transparent the electron drift velocity enhancement offered by transient electron transport over steady-state electron transport. A comparison, with results corresponding to gallium nitride, indium nitride, and aluminum nitride, is provided. The device implications of these results are then presented.

Keywords

transportationZnII-VI
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1577: Symposium XX – Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies , 2013 , mrss13-1577-xx03-24
Copyright
Copyright © Materials Research Society 2013

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References

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