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State-of-the-Art Evaluation of Ultra-Clean Ulsi Processes

Published online by Cambridge University Press:  10 February 2011

A. Fischer-Colbrie ,
S. S. Laderman ,
S. Brennan ,
S. Ghosh ,
N. Takaura ,
P. Pianetta ,
A. Shimazaki ,
A. Waldhauer ,
D. Wherry  and
S. Barkan
A. Fischer-Colbrie
Affiliation:
Hewlett-Packard Labs, Bldg. 26, 3500 Deer Creek Rd., Palo Alto, CA 94304
S. S. Laderman
Affiliation:
Hewlett-Packard Labs, Bldg. 26, 3500 Deer Creek Rd., Palo Alto, CA 94304
S. Brennan
Affiliation:
Stanford Synchrotron Radiation Lab, SLAC MS 69. PO Box 4349, Stanford, CA 94309
S. Ghosh
Affiliation:
Stanford Synchrotron Radiation Lab, SLAC MS 69. PO Box 4349, Stanford, CA 94309
N. Takaura
Affiliation:
Stanford Synchrotron Radiation Lab, SLAC MS 69. PO Box 4349, Stanford, CA 94309
P. Pianetta
Affiliation:
Hewlett-Packard Labs, Bldg. 26, 3500 Deer Creek Rd., Palo Alto, CA 94304
A. Shimazaki
Affiliation:
Toshiba Corp., Kawasaki, Japan
A. Waldhauer
Affiliation:
Applied Materials, 350 Bowers Ave., Santa Clara, CA 95051
D. Wherry
Affiliation:
Kevex, Inc., 855 Veterans Blvd., San Carlos, CA 94070
S. Barkan
Affiliation:
Kevex, Inc., 24911 Avenue Stanford, Valencia, CA 91355
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Abstract

This work describes recent progress in implementation and applications of synchrotron radiation total reflection x-ray fluorescence (SR-TXRF) to measure trace metals on wafer surfaces. To date, we have achieved state-of-the-art transition metal sensitivity of 3×108 atoms/cm2 (˜3fg) for 1000 sec. counting time for impurities which have an monolayer-like distribution on the surface and <1fg for droplet-like impurities. Recent instrumentation breakthroughs include reduction of detector parasitic backgrounds (particularly Cu) to below our present detection limit, 150 and 200mm whole-wafer handling, wafer-mapping capability and a cleanroom mini-environment. With these upgrades, measurements were made of wafers from various steps in the integrated circuit fabrication process. These results demonstrate that synchtron radiation brings TXRF into a new and useful regime. Further developments are underway to increase throughput and access for broader application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 403
Copyright
Copyright © Materials Research Society 1997

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References

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