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Stability of a-Si:H TFTs Employing APCVD SiO2 with N2 Plasma Treatment as a Gate Dielectric

Published online by Cambridge University Press:  16 February 2011

M.C. Jun ,
Y.S. Kim ,
E.Y. Oh ,
D.G. Kim  and
M.K. Han
M.C. Jun
Affiliation:
Dept. of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
Y.S. Kim
Affiliation:
Dept. of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
E.Y. Oh
Affiliation:
Dept. of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
D.G. Kim
Affiliation:
Dept. of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
M.K. Han
Affiliation:
Dept. of Electrical Engineering, Seoul National University, Seoul 151–742, Korea
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Abstract

We have investigated the stability of the hydogenated amorphous silicon thin film transistors (a-Si:H TFTs) employing silicon dioxide (SiO2) with N2 plasma treatment as a gate dielectric, where SiO2 was deposited by atmospheric pressure chemical vapor deposition (APCVD). Their stability was compared with those of a-Si:H TFTs whose gate dielectric was silicon nitride (SiNx) deposited by plasma enhanced chemical vapor deposition (PECVD). Two kinds of stresses, gate bias and light illumination, were applied. The threshold voltage shin (AVu,) and the inverse subthreshold slope shift (ΔVth) were measured as a function of the bias voltage and the light stress time. For the positive bias stress, the ΔVth, of the a-Si:H TFTs with the N2 plasma treated SiO2 dielectric is smaller than that with the PECVD SiNx gate dielectric. For the negative bias stress and light stress, however, the ΔVth of TFT with N2 plasma treated SiO2 dielectric is larger than that with the SiNx dielectric

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 799
Copyright
Copyright © Materials Research Society 1994

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References

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