This paper examines factors affecting the oxidation behavior of Ir thin film electrodes and the stability of bilayer Ir/Ir-Ir-O-Si electrodes on silicon substrates. We first examine the morphology and texture of faceted IrO2 extrusions formed on the Ir films during thermal oxidation, and show that an Ir grain-growth anneal in N2 at 650°C for 5 min prior to the oxidation treatment increases both the areal density of IrO2 extrusions and the IrO2<110> x-ray diffraction intensity while decreasing apparent film roughness. We then examine the stability of bilayer lr(100 nm)/Ir(20 nm) films on polycrystalline silicon and show how fairly mild oxygen anneals of the Ir(20 nm)/Si structures can provide an in-situ formed Ir-O-Si barrier that protects the subsequently deposited Ir(100 nm) layer from silicidation reactions during annealing in N2 ambients at 750°C. Transmission electron microscopy indicates that this in-situ formed barrier at the Ir/Si interface has a two layer structure comprising an IrSix underlayer in contact with the silicon substrate and an SiO2 overlayer directly below the remaining Ir.