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Stability and Metastability in Semiconductor Strained-Layer Structures
Published online by Cambridge University Press: 25 February 2011
Abstract
The physics governing stability properties and relaxation of mismatch strain in semiconductor strained-layer structures is reviewed. Experimental data on stability and rates of strain relaxation are examined. We conclude that essentially all observations on structural relaxation of semiconductor strained-layer structures can be explained by standard models of plastic deformation adapted to the special conditions controlling dislocation dynamics in these structures.
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- Copyright © Materials Research Society 1988