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Stability and Metastability in Semiconductor Strained-Layer Structures

Published online by Cambridge University Press:  25 February 2011

Brian W. Dodson ,
I. J. Fritz ,
S. Thomas Picraux  and
Jeffrey Y. Tsao
Brian W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
I. J. Fritz
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
S. Thomas Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
Jeffrey Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
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Abstract

The physics governing stability properties and relaxation of mismatch strain in semiconductor strained-layer structures is reviewed. Experimental data on stability and rates of strain relaxation are examined. We conclude that essentially all observations on structural relaxation of semiconductor strained-layer structures can be explained by standard models of plastic deformation adapted to the special conditions controlling dislocation dynamics in these structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 141
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Ball, C.A.B. and van der Merwe, J.H., in Dislocations in Solids, Chapter 27, Nabarro, F.R.N., ed. (North-Holland, New York, 1983).Google Scholar
2.Matthews, J.W. and Blakeslee, A.E., J. Crystal Growth 21, 118 (1974).Google Scholar
3.Dodson, B.W. and Tsao, J.Y., Appl. Phys. Lett. 51, 1325 (1987).Google Scholar
4.Tsao, J.Y., Dodson, B.W., Picraux, S.T., and Cornelison, D.M., Phys. Rev. Lett. (in press).Google Scholar
5.Dodson, B.W. and Taylor, P.A., Appl. Phys. Lett. 49, 642 (1986).Google Scholar
6.Sugita, Y., Tamura, M., and Sugawara, K., J. Vac. Sci. Tech. 6, 585 (1969).Google Scholar
7.Matthews, J.W., Mader, S., and Light, T.B., J. Appl. Phys. 41, 3800 (1970).Google Scholar
8.Kasper, E., Herzog, H.J., and Kibbel, H., Appl. Phys. 8, 199 (1975).Google Scholar
9.Bean, J.C., Sheng, T.T., Feldman, L.C., Fiory, A.T., and Lynch, R.T., Appl. Phys. Lett. 44, 102 (1984).Google Scholar
10.Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S., and Robinson, I.K., J. Vac. Sci. Tech. A2, 436 (1984).Google Scholar
11.Fiory, A.T., Bean, J.C., Hull, R., and Nakahara, S., Phys. Rev. B31, 4063 (1985).Google Scholar
12.Kamigaki, K., Sakashita, H., Kato, H., Nakayama, M., Sano, N., and Terauchi, H., Appl. Phys. Lett. 49, 1071 (1986).Google Scholar
13.Orders, P.J. and Usher, B.F., Appl. Phys. Lett. 50, 980 (1987).Google Scholar
14.Eberl, K., Krotz, G., Wolf, T., Schaffler, F., and Abstreiter, G., Semicond. Sci. Tech. 2, 561 (1987).Google Scholar
15.Laidig, W.D., Peng, C.K., and Lin, Y.F., J. Vac. Sci. Tech. B2, 181 (1984); N.G. Anderson, W.D. Laidig, R.M. Kolbas, and Y.C. Lo, J. Appl. Phys. 60, 2361 (1986).Google Scholar
16.Fritz, I.J., Picraux, S.T., Dawson, L.R., Drummond, T.J., Laidig, W.D., and Anderson, N.G., Appl. Phys. Lett. 46, 967 (1985).Google Scholar
17.Gourley, P.L., Biefeld, R.M., and Dawson, L.R., Appl. Phys. Lett. 47, 482 (1985).Google Scholar
18.Fritz, I.J., Gourley, P.L., and Dawson, L.R., Appl. Phys. Lett. 51, 1004 (1987).Google Scholar
19.Gourley, P.L., Fritz, I.J., and L.R. Dawson (Preprint).Google Scholar
20.People, R. and Bean, J.C., Appl. Phys. Lett. 47, 322 (1985).Google Scholar
21.Fritz, I.J., Appl. Phys. Lett. 51, 1080 (1987).Google Scholar
22.Alexander, H. and Haasen, P., in Solid State Physics (Academic, New York, 1968), Vol 22.Google Scholar
23.Patel, J.R., Disc. Faraday Soc. 38, 201 (1964).Google Scholar
24.Frost, H.J. and Ashby, M.F., Deformation-Mechanism Maps (Pergamon,Oxford, 1982).Google Scholar
25.Dodson, B.W. and Tsao, J.Y. (Preprint).Google Scholar