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Sputtering of Lead-Based Ferroelectrics

Published online by Cambridge University Press:  21 February 2011

K. Iijima ,
N. Nagao ,
T. Takeuchi ,
I. Ueda ,
Y. Tomita  and
R. Takayama
K. Iijima
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Yakumonakamachi, Moriguchi, Osaka 570, Japan
N. Nagao
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Yakumonakamachi, Moriguchi, Osaka 570, Japan
T. Takeuchi
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Yakumonakamachi, Moriguchi, Osaka 570, Japan
I. Ueda
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Yakumonakamachi, Moriguchi, Osaka 570, Japan
Y. Tomita
Affiliation:
Materials and Devices Research Laboratory, Matsushita Electric Industrial Co. Ltd., Kadoma, Osaka 570, Japan
R. Takayama
Affiliation:
Materials and Devices Research Laboratory, Matsushita Electric Industrial Co. Ltd., Kadoma, Osaka 570, Japan
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Abstract

PbTiO3(PT), Pb1-xLaxTi1-x/4O3(PLT) and PbZrxTi1-xO3(PZT) thin films were prepared by rf magnetron sputtering. It was found that the thin films have remarkably large pyroelectric effect and high figures of merit for infrared sensors without poling treatment. High performance pyroelectric infrared sensors (single element and linear array) were fabricated by using the PLT(x=0.1) thin films with the new structures and the device process. This type of sensor is carried on the air conditioner to detect a thermal environment. The PZT thin films with x=0.9 showed a large remanent polarization of 46μC/cm2 and small coercive force of 28kV/cm. In addition, good endurance behavior (no degradation of Pr after 1011 cycles) was observed. Recent activities of ferroelectric thin film research in Japan is also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 455
Copyright
Copyright © Materials Research Society 1993

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References

1. Okuyama, M., Usuki, T., Hamakawa, Y. and Nakagawa, T., Appl. Phys., 21,339 (1980).Google Scholar
2. Okada, M., Tominaga, K., Araki, T., Katayama, S. and Sakashita, Y., Jpn. J. Appl. Phys., 29, 718 (1990).Google Scholar
3. Iijima, K., Tomita, Y., Takayama, T. and Ueda, I., J. Appi.Phys., 60,361 (1986).Google Scholar
4. Iijima, K., Takayama, T., Tomita, Y. and Ueda, I., ibid., 60, 2914 (1986).Google Scholar
5. Iijima, K., Ueda, I. and Kugimiya, K., Jpn. J. Appl. Phys., 30,2149 (1991).Google Scholar
6. Takayama, R. and Tomita, Y., J.Appl. Phys., 65,1666 (1989).CrossRefGoogle Scholar
7. Takayama, R., Tomita, Y., Iijima, K. and Ueda, I., J.Appl. Phys., 63,5868 (1988).Google Scholar
8. Takayama, R., Tomita, Y., Iijima, K. and Ueda, I., ibid., 61, 411 (1987).Google Scholar
9. Ferroelectric Thin Films Mat. Res. Soc. Proc. 243,(Eds. Kingon, A.I., Mayers, E.R. and Tuttle, B.) MRS (1992).Google Scholar
1 O.Shirayanagi, A., Tominaga, K., and Okada, M., Ext. Abstracts the 40th Spring Meeting of Jpn. Soc. Appl. Phys. Tokyo Japan (1993), Vol.2, p490.Google Scholar
11. Ushikubo, M., Ito, Y., Kawabe, T., Matusnaga, H., Ohtani, N. and Takase, T., ibid., p444.Google Scholar
12. Mihara, T., Watanabe, H. and Araujo, C. Paz de, ibid., p448.Google Scholar
13. Nagao, N. and Iijima, K., ibid., p443.Google Scholar
14. Berlincourt, D.A., Cmouk, C. and Jaffe, H., Proc. IRE, 48,220 (1960).Google Scholar
15. Sreenivas, K., Sayer, M. and Garrett, P., Thin Solid Film, 251 (1989).Google Scholar
16. Takeuchi, H. and Kushida, K., Proc. IEEE 7th Int. Symp. on Application of Ferroelectrics, p115.Google Scholar
17. Iijima, K., Terashima, T., Bando, Y., Kamigaki, K. and Terauchi, H., J. Appl. Phys., 72,2840 (1992).CrossRefGoogle Scholar