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Spin-on Gate Dielectric Materials for Next Generation Display Systems

Published online by Cambridge University Press:  01 February 2011

Jinghong Chen
Affiliation:
jinghong.chen@honeywell.com, Honeywell Electronic Materials, Dielectrics, 1349 Moffett Park Drive, Sunnyvale, CA, 94089, United States, 408-9622210, 408-9801430
Mehari Stifanos
Affiliation:
mehari.stifanos@honeywell.com, Honeywell Electronic Materials, Dielectrics, 1349 Moffett Park Drive, Sunnyvale, CA, 94089, United States
Jan Nedbal
Affiliation:
jan.nedbal@honeywell.com, Honeywell Electronic Materials, Dielectrics, 1349 Moffett Park Drive, Sunnyvale, CA, 94089, United States
Ahila Krishnamoorthy
Affiliation:
ahila.krishnamoorthy@honeywell.com, Honeywell Electronic Materials, Dielectrics, 1349 Moffett Park Drive, Sunnyvale, CA, 94089, United States
Emma Brouk
Affiliation:
emma.brouk@honeywell.com, Honeywell Electronic Materials, Dielectrics, 1349 Moffett Park Drive, Sunnyvale, CA, 94089, United States
Pete Smith
Affiliation:
pete.smith@honeywell.com, Honeywell Specialty Materials, 101 Columbia Road, Morristown, NJ, 07962, United States
Brian Daniels
Affiliation:
brian.daniels2@honeywell.com, Honeywell Electronic Materials, Dielectrics, 1349 Moffett Park Drive, Sunnyvale, CA, 94089, United States
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Abstract

We present recent advances on spin-on polymers as gate dielectric for thin film transistors. We have developed film type I with significantly improved dielectric properties. At a curing temperature of 250 °C, the dielectric constant is 3.46, the breakdown voltage is 4.10 MV/cm at 1 μA/cm2, the leakage current is 4.9 × 10−8 A/cm2 at 2.5 MV/cm, and the CV hysteresis is 3.4 V. At a curing temperature of 425 °C, the dielectric constant, the breakdown voltage, the leakage current, and the CV hysteresis are 3.2, 4.73 MV/cm, 2.6 × 10−8 A/cm2, and 0.44 V respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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