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Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots

Published online by Cambridge University Press:  01 February 2011

Ana Helman ,
Khalid Moumanis ,
Maria Tchernycheva ,
Alain Lusson ,
Francois Julien ,
Benjamin Damilano ,
Nicolas Grandjean ,
Jean Massies ,
Christophe Adelmann  and
Frederic Fossard
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Ana Helman
Affiliation:
Action OptoGaN, Institut d'Electronique Fondamentale, UMR8622 CNRS, Bât.220Université Paris-Sud, 91405 Orsay, France
Khalid Moumanis
Affiliation:
Action OptoGaN, Institut d'Electronique Fondamentale, UMR8622 CNRS, Bât.220Université Paris-Sud, 91405 Orsay, France
Maria Tchernycheva
Affiliation:
Action OptoGaN, Institut d'Electronique Fondamentale, UMR8622 CNRS, Bât.220Université Paris-Sud, 91405 Orsay, France
Alain Lusson
Affiliation:
Action OptoGaN, Institut d'Electronique Fondamentale, UMR8622 CNRS, Bât.220Université Paris-Sud, 91405 Orsay, France
Francois Julien
Affiliation:
Action OptoGaN, Institut d'Electronique Fondamentale, UMR8622 CNRS, Bât.220Université Paris-Sud, 91405 Orsay, France
Benjamin Damilano
Affiliation:
Centre de Recherche sur l'Hétéroepitaxie et ses Applications, CNRS, rue B. Gregory, Sophia Antipolis, 06560 Valbonne, France
Nicolas Grandjean
Affiliation:
Centre de Recherche sur l'Hétéroepitaxie et ses Applications, CNRS, rue B. Gregory, Sophia Antipolis, 06560 Valbonne, France
Jean Massies
Affiliation:
Centre de Recherche sur l'Hétéroepitaxie et ses Applications, CNRS, rue B. Gregory, Sophia Antipolis, 06560 Valbonne, France
Christophe Adelmann
Affiliation:
CEA/CNRS Research Group “Nanophysique et Semiconducturs”, DRFMC/SPMM, CEA/Grenoble, 17 rue des Martyrs, 38054 Grenoble, France
Frederic Fossard
Affiliation:
CEA/CNRS Research Group “Nanophysique et Semiconducturs”, DRFMC/SPMM, CEA/Grenoble, 17 rue des Martyrs, 38054 Grenoble, France
Daniel Le Si Dang
Affiliation:
CEA/CNRS Research Group “Nanophysique et Semiconducturs”, DRFMC/SPMM, CEA/Grenoble, 17 rue des Martyrs, 38054 Grenoble, France
Bruno Daudin
Affiliation:
CEA/CNRS Research Group “Nanophysique et Semiconducturs”, DRFMC/SPMM, CEA/Grenoble, 17 rue des Martyrs, 38054 Grenoble, France
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Abstract

We present a detailed analysis of inter- and intraband transitions in GaN/AlN self-organized quantum dots grown on sapphire, silicon (111) and 6H-SiC substrates. Quantum dot samples have been characterized by means of transmission electron microscopy, photoluminescence and photo-induced absorption spectroscopy. Interlevel transitions in the conduction band are observed in the 0.52–0.98 eV energy range, thus covering the telecommunication band. The s-pz absorption is peaked at 0.8 eV (0.52 eV) for samples with dot height of 1.5 nm (6 nm). Calculations show that in bigger dots the transition energy is governed by the value of the internal field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.51
Copyright
Copyright © Materials Research Society 2004

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References

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