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Spectroscopic Characterization of Ion-Implanted GaN

Published online by Cambridge University Press:  11 February 2011

L. Chen  and
B. J. Skromme
L. Chen
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona, State University, Tempe, AZ, 85287–5706, U.S.A.
B. J. Skromme
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona, State University, Tempe, AZ, 85287–5706, U.S.A.
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Abstract

We investigate implantation of high purity HVPE GaN with Mg, Be, C, Zn, Cd, Ca, N, O, P, As, Ne, and Ar. After annealing at 1300 °C, the material is characterized using low temperature photoluminescence (PL). The Mg acceptors exhibit much better optical activation than Be, C, Zn, Cd, or Ca acceptors implanted and annealed under the same conditions. Acceptor-bound exciton peaks and well-resolved donor-acceptor pair bands are observed for both Mg and Zn. A broad peak centered near 2.78 eV is obtained for Cd, confirming that it is deeper than Zn. Isoelectronic As or P exhibit sharp no-phonon bound exciton lines at 2.952 and 3.200 eV, respectively. Defect-related bands centered at 2.2 and 2.35 eV are studied. Both Be and C strongly enhance the yellow (2.2 eV) PL band, but no other impurities do so, including O.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.35
Copyright
Copyright © Materials Research Society 2003

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References

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