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Spectroscopic Characterization and Investigation of Strained InGaAs/GaAs Heterostructures
Published online by Cambridge University Press: 25 February 2011
Abstract
We report the comprehensive investigation and characterization of the band structure and interband transitions for the strained InxGa1−xAs/GaAs heterostructures and QW by use of a combination of- different spectroscopic techniques, that is photocurrent, photoreflectance and photoabsorption spectroscopies under low temperatures and high pressures.
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- Research Article
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- Copyright © Materials Research Society 1991
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