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Spectral Sensitivities of X-Ray Diffraction and Atomic Force Microscopy to the Roughness of Si/SiO2 Interfaces

Published online by Cambridge University Press:  21 February 2011

K. W. Evans-Lutterodt  and
Mau-Tsu Tang
K. W. Evans-Lutterodt
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
Mau-Tsu Tang
Affiliation:
S.R.R.C, Taiwan R.O.C.
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Abstract

Root mean square measurements of the Si(001)/SiO2 interface have been performed with a variety of techniques. Using X-ray diffraction to represent the diffraction class of techniques, and atomic force microscopy to represent imaging techniques, we discuss the effect that limitations of each technique have on experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 373
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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