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Some Recent Developments in Industrial Ion Implanters

Published online by Cambridge University Press:  25 February 2011

Geoff Ryding
Geoff Ryding*
Affiliation:
Eaton Corporation, Ion Beam Systems Division, Beverly, Massachusetts 01915, U.S.A.
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Abstract

semiconductor doping. This paper surveys some of the equipment developed at Eaton Corporation in response to the proliferation of ion implanted devices. Developments in both high current (~10mA) and medium current (~1mA) implanters will be discussed.

The evolution of dedicated equipment for the production of buried oxide layers (silicon on insulator technology) will also be reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 367
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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