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Some Aspects of the Materials Science of Low-K Integration

Published online by Cambridge University Press:  01 February 2011

Vincent McGahay
Vincent McGahay*
Affiliation:
IBM Corporation 2070 Route 52 Z/E40 Hopewell Junction, NY 12533
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Abstract

The microelectronic industry's transition to low dielectric constant insulators in the wiring levels of integrated circuits has proven to be more difficult than expected. Materials properties are an integral part of the problem, as much for yield as for reliability. Unfortunately, many properties which are important for manufacturing robustness tend to degrade as the dielectric constant is lowered. Although materials properties are a useful guide to low-K manufacturability, inflexibility with regard to specifications could ultimately limit future progress. Application of basic principles of materials science to the integration of low-K dielectrics can give critical insight into the nature of the difficulties. Several examples of problems in low-K integration which benefit from such analysis are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E6.1
Copyright
Copyright © Materials Research Society 2003

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References

[1] Wetzel, J.T., National Technology Roadmap for Semiconductors, (Semiconductor Industry Association, San Jose, 1997) p. 101. See Table 32.Google Scholar
[2] Wetzel, J.T., Lin, S.H., Mickler, E., Lee, J., Ahlburn, B., Jin, C., Fox, R.J. III, Tsai, M.H., Mlynko, W., Monnig, K.A., Winebarger, P.M., 2001 IEDM Technical Digest, (IEEE, Piscataway NJ, 2001) pp. 4.1.1–4.1.3.Google Scholar
[3] Xu, G., He, J., Andideh, E., Bielefeld, J., and Scherban, T., Proc. IEEE 2002 IITC, pp. 57–79.Google Scholar
[4] Young, W.C. and Budynas, R.G., Roark's Formulas for Stress and Strain, 7th ed. (McGraw-Hill, New York, 2002) p. 702.Google Scholar
[5] Doucet, L. and Carlotti, G., in Thin Films: Stresses and Mechanical Properties V, (Mater. Res. Soc. Proc. 356, Pittsburgh, PA, 1995) pp. 215–220.Google Scholar
[6] Kingery, W.D., Bowen, H.K., and Uhlmann, D.R., Introduction to Ceramics, 2nd ed. (John Wiley & Sons, New York, 1976) pp. 785–805.Google Scholar
[7] Mazarin, O. V., Streltsina, M.V., and Shvaiko-Shvaikovskaya, T.P., Handbook of Glass Data: Part A (Elsevier, Amsterdam, 1983), p. 97 (modulus), p. 126 (surface energy).Google Scholar
[8] Krevelen, D.W. Van, Properties of Polymers Handbook, 3rd ed. (Elsevier, Amsterdam, 1997).Surface energy data are taken from Table 8.2, p. 233. Modulus data are taken from Table 13.4, p. 374. Polymers represented in Figure 4 are polyethylene, nylon, polymethyl methacrylate, and polystyrene.Google Scholar
[9] Padovani, A.M., Rhodes, L., Riester, L., Lohman, G., Tsuie, B., Conner, J., Allen, S.A.B., and Kohl, P.A., Electrochem. Solid-State Lett. 4, F25–F28 (2001).Google Scholar
[10] Young, W.C. and Budynas, R.G., op. cit., p. 508.Google Scholar