Hostname: page-component-788cddb947-jbjwg Total loading time: 0 Render date: 2024-10-13T20:58:44.148Z Has data issue: false hasContentIssue false
  • English
  • Français

Solid-Phase Amorphization in Layered Metal/Silicon thin Films

Published online by Cambridge University Press:  25 February 2011

Menachem Nathan
Menachem Nathan*
Affiliation:
Martin Marietta Laboratories, 1450 S. Rolling Rd., Baltimore, MD 21227
Get access

Abstract

A general scheme for determining which metal-Si systems undergo solidphase amorphization (SPA) upon rapid thermal annealing is presented and used to investigate Ni-Si, Ti-Si, V-Si, Co-Si and Cr-Si reactions. SPA occurs only in the first three systems. With the glaring exception of Co-Si, the results agree with the thermodynamic predictions of SPA in systems in which the free energy of a glassy phase is significantly lower than the free energy of the separate components. The amorphization may also be influenced by the diffusing species and contamination. Following SPA, the first crystalline compound is determined by nucleation kinetics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 223
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Natan, M., MRS Symposia Proceedings, 54, 115 (1985).Google Scholar
2.Natan, M., Appl. Phys. Lett. 49, 257 (1986).Google Scholar
3.Natan, M., J. Vac. Sci. Technol. B 4, 1404 (1986).Google Scholar
4.Natan, M., vide, Le, les couches minces, 42, 17 (1987).Google Scholar
5.Katz, A. and Komem, Y., unpublished.Google Scholar
6.Natan, M., MRS Symposia Proceedings, 74, 679 (1986).Google Scholar
7. See, for example, Johnson, W. L. in Prog. in Mater. Sci. 30, 81 (1986).Google Scholar
8.Bene, R. W., J. Appl. Phys. 61, 1826 (1987).Google Scholar
9.Nathan, M. (Natan), to be published in J. Appl. Phys.Google Scholar
10.Nicolet, M.-A and Lau, S. S. in VLSI Electronics: Microstructure Science, 6 edited by Einspruch, N. G. and Larrabee, G. B. (Academic Press, NY, 1983), pp. 329–464.Google Scholar
11.Holloway, K. and Sinclair, R., J. Appl. Phys. 61, 1359(1987).Google Scholar
12.Gosele, U. and Tu, K. N., J. Appl. Phys. 53, 3253 (1982).Google Scholar
13.Tu, K. N., Ottaviani, G., Thompson, R. D. and Mayer, J. W., J. Appl. Phys. 53, 406 (1982).Google Scholar