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Small Diameter Dry Etched Via Holes in GaAs

Published online by Cambridge University Press:  22 February 2011

S. J. Pearton ,
F. Ren ,
A. Katz ,
B. Tseng ,
J. R. Lothian  and
T. R. Fullowan
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
B. Tseng
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. R. Lothian
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. R. Fullowan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Two techniques for fabricating through-wafer via holes in 2-4 mil thick GaAs substrates were examined. In the first, Ni or thick photoresist masks were used for patterning 30 μm diameter vias by ECR-rf dry etching using low pressure (10-20 mTorr), low bias (– 150V) BCI3/C12 discharges. Microwave enhancement of these discharges produced faster etch rates but a greater degree of isotropic material removal at a given pressure. Reducing the process pressure produces extremely anisotropic features with high aspect ratio. The BC13-to-C12 ratio must be kept to ≥5:1 to maintain the anisotropy. A novel laser drilling technique was also examined - in this case a Q-switched beam with high energy density was used to ablate material in each pass of the beam, producing a via in approximately 40 passes. This is a maskless procedure capable of producing any desired via hole pattern, but currently there is no selectivity for ablating GaAs over a front-side metal film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 153
Copyright
Copyright © Materials Research Society 1993

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References

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