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Size Effects and Domains in Ferroelectric Thin Film Actuators

Published online by Cambridge University Press:  10 February 2011

S. Trolier-Mckinstry ,
C. A. Randall ,
J. P. Maria ,
C. Theis ,
D. G. Schlom ,
J. Shepard Jr.  and
K. Yamakawa
S. Trolier-Mckinstry
Affiliation:
Department of Materials Science and Engineering and Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
C. A. Randall
Affiliation:
Department of Materials Science and Engineering and Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
J. P. Maria
Affiliation:
Department of Materials Science and Engineering and Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
C. Theis
Affiliation:
Department of Materials Science and Engineering and Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
D. G. Schlom
Affiliation:
Department of Materials Science and Engineering and Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
J. Shepard Jr.
Affiliation:
Department of Materials Science and Engineering and Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
K. Yamakawa
Affiliation:
Department of Materials Science and Engineering and Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
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Abstract

Ferroelectric thin films typically differ from bulk ceramics in terms of both the average grain size and the degree of stress imposed on the film by the substrate. Studies on bulk ceramics have demonstrated that the number of domain variants within grains depends on the grain size for sizes <˜lμm. This can diminish the poling efficiency of the material. Since most thin films show primary grain sizes well below a micron, similar effects should be observed in films. In addition, since the perovskite ferroelectrics contain ferroelastic as well as ferroelectric domains, it seems clear that stress in thin films may markedly alter the degree to which domain walls contribute to the observed properties. In this paper, the relative importance of these factors are discussed for several types of ferroelectric thin films. Films have been prepared by pulsed laser deposition, magnetron sputtering, and by sol-gel processing. It has been found that epitaxial BaTiO3 films are ferroelectric at 77K down to thicknesses as low as ˜ 60nm. Data on the low and high field electrical properties are reported as a function of temperature, the film crystallinity, and film thickness for representative perovskite films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 363
Copyright
Copyright © Materials Research Society 1996

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