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Single Crystal Growth of Gallium Nitride Substrates Using an High Pressure High Temperature Process

Published online by Cambridge University Press:  15 March 2011

Rajiv K. Singh ,
Donald R. Gilbert ,
Francis Kelly ,
Robert Chodelka ,
Reza Abbaschian ,
Stephen Pearton ,
Alexander Novikov ,
Nikolay Patrin  and
John Budai
Rajiv K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
Donald R. Gilbert
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
Francis Kelly
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
Robert Chodelka
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
Reza Abbaschian
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
Stephen Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
Alexander Novikov
Affiliation:
The Gemesis Corporation, Gainesville, FL
Nikolay Patrin
Affiliation:
The Gemesis Corporation, Gainesville, FL
John Budai
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN
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Abstract

The use of standard bulk semiconductor crystal growth processes for the production of GaN is prohibited by both the high melt temperature of GaN and thermal decomposition of the compound into Ga metal and N2 gas. We have employed a novel hydrostatic pressure system to grow GaN crystals. A high temperature, ultra-high pressure process was developed using a solid-phase nitrogen source to form GaN crystals in a Ga metal melt. Using a thermal gradient diffusion process, in which nitrogen dissolves in the high temperature region of the metal melt and diffuses to the lower temperature, lower solubility region, high quality crystals up to ∼1 mm in size were formed, as determined by SEM, X-ray diffraction and micro-Raman analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T4.8.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Porowski, S. and Grzegory, I., in “Properties of Group III Nitrides”, Edgar, J. editor, INSPEC, the Institution of Electrical Engineers, p. 80 (1994)Google Scholar
2. Porowski, S., Jun, J, Perliu, P., Gregory, I., Teissere, H., Suski, T., Inst. Phys. Conference, Ser 137, 369 (1994)Google Scholar
3. Grzegory, I. et al. , Physica B 185, 99 (1993)Google Scholar
4. Porowski, S., J. Cryst. Growth 166, 583 (1996)Google Scholar
5. Grzegory, I. et al. , MRS Internet J. Nitride Semicond. Res. 1, 20 (1996)Google Scholar
6. Porowski, S., Grzegory, I., J. Cryst. Growth 178, 174 (1997)Google Scholar
7. Porowski, S., MRS Internet J. Nitride Semicond. Res. 4S1, G1.3 (1999)Google Scholar
8. Usui, A, Sunakawa, H., Sakia, A, Yamaguchi, A, Jpn. J Appl. Phys. 36, 1899 (1997)Google Scholar
9. Melnik, Y., Vassilevski, K., Nikitina, I., Babanin, A., Davydov, V., and Dmitriev, V., MRS Internet J. Nitride Semicond. Res. 2, 39 (1997)Google Scholar
10. Shibata, T., Sone, H., Yahashi, K., Yamaguchi, M., Hiramatsu, K., Sawaki, N., and Itoh, N., J. Cryst. Growth 189/190, 67 (1998)Google Scholar
11. Zhang, R., Zhang, L., Hansen, D., Boleslawski, M., Chen, K., Lu, D., Shen, B., Zheng, Y., and Kuech, T., MRS Internet J. Nitride Semicond. Res. 4S1, G4.7 (1999)Google Scholar
12. Vodakov, Yu. A., Morkov, E.N., Roenkov, A.D., J. Cryst. Growth 183, 10 (1997)Google Scholar