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Simultaneous Fabrication of Insulator and Contact Holes by Excimer Laser

Published online by Cambridge University Press:  25 February 2011

S. Aomori  and
M. Murahara
S. Aomori
Affiliation:
Graduate Student of Faculty of Eng., Tokai Univ.; Faculty of Eng., Tokai Univ., 1117 Kitakaname Hiratsuka, Kanagawa 259-12, Japan
M. Murahara
Affiliation:
Graduate Student of Faculty of Eng., Tokai Univ.; Faculty of Eng., Tokai Univ., 1117 Kitakaname Hiratsuka, Kanagawa 259-12, Japan
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Abstract

A SiO2 insulator and contact holes were simultaneously fabricated at room temperature by ArF and KrF excimer lasers. In this method, NF3 and O2 gases were employed for the reaction gas. When the ArF laser beam irradiated the NF3 and O2 gases in the presence of Si, SiFn and NO2 were produced by photo-chemical reaction. The SiFn adsorbed on the Si substrate pulled out O atoms from the NO2 to form a SiO2 layer. At the same time, the patterned KrF laser beam projected on the substrate and ablated the part exposed to fabricate contact holes. As the results, the simultaneous fabrication of SiO2 insulator with the 700 Å film thickness and selective pattern with the 10 μm width was demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 9
Copyright
Copyright © Materials Research Society 1992

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References

1)Loper, G.L. and Tabat, M.D., Appl. Phys. Lett. 46, 654(1985)Google Scholar
2)Ogura, T., Yokoyama, Y., Inoue, T. and Hirose, M., Extended Abstracts of 18th Conf. On SSDM 205(1986)Google Scholar
3)Hirose, M., Yokoyama, S. and Yamakage, Y., J. Vac. Sci. Tec. 3, 1445(1985)CrossRefGoogle Scholar
4)Floures, A.L. and Darwent, B. Deb, J. Phys. Chem. 73, 2203(1969)Google Scholar
5)Chuang, T.J., J.Appl.Phys. 51, 2614 (1980)CrossRefGoogle Scholar
6)Chuang, T.J., Surface Science Reports(North-Holland, Amsterdam, 1983), Vol.3, p. 1 Google Scholar
7)Murahara, M., Yonekawa, M. and Shirakawa, K., '90 CLEO Proceedings CWB6, 228 (1990)Google Scholar
8)Murahara, M., Aomori, S. and Yonekawa, M., '91 CLEO Proceedings CWF55, 284 (1991)Google Scholar