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Simulation and Electron Energy-Loss Spectroscopy of Electron Beam Induced Point Defect Agglomerations in Silicon

Published online by Cambridge University Press:  17 March 2011

Nathan G. Stoddard ,
Gerd Duscher ,
Wolfgang Windl  and
George A. Rozgonyi
Nathan G. Stoddard
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh, NC, 27695-7916
Gerd Duscher
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh, NC, 27695-7916 Condensed Matter Science Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Wolfgang Windl
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, Columbus, OH 43210-1178
George A. Rozgonyi
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh, NC, 27695-7916
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Abstract

Nitrogen doped silicon samples were irradiated with 200 kV electrons in a transmission electron microscope (TEM). The resulting room temperature point defect creation, bonding and segregation were studied by in situ conventional and Z Contrast TEM imaging and electron energy loss spectroscopy (EELS). Energy loss spectra from areas attributed to be rich in vacancies or silicon self-interstitials are found to be significantly different from the bulk in the near-edge structure of their Si-L2,3 edges. The experimental results are compared with ab initio density of states calculations for electronically excited atoms near relaxed point defect structures and plans are outlined to extend this technique to individual point defect characterization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C3.9
Copyright
Copyright © Materials Research Society 2004

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References

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