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Silicon-Carbon Random Alloy Epitaxy on Silicon by Rapid Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

J. Mi ,
P. Letourneau ,
J.-D. Ganière ,
M. Gamhanou ,
M. Dutoit ,
C. Dubois  and
J. C. Dupuy
J. Mi
Affiliation:
Swiss Federal Institute of Technology, Institute for Micro- and Optoelectronics, 1015 Lausanne, Switzerland
P. Letourneau
Affiliation:
Swiss Federal Institute of Technology, Institute for Micro- and Optoelectronics, 1015 Lausanne, Switzerland
J.-D. Ganière
Affiliation:
Swiss Federal Institute of Technology, Institute for Micro- and Optoelectronics, 1015 Lausanne, Switzerland
M. Gamhanou
Affiliation:
Swiss Federal Institute of Technology, Institute for Micro- and Optoelectronics, 1015 Lausanne, Switzerland
M. Dutoit
Affiliation:
Swiss Federal Institute of Technology, Institute for Micro- and Optoelectronics, 1015 Lausanne, Switzerland
C. Dubois
Affiliation:
Laboratoire de Physique de la Matière, INSA, 69621 Villeurbanne, France
J. C. Dupuy
Affiliation:
Laboratoire de Physique de la Matière, INSA, 69621 Villeurbanne, France
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Abstract

We have grown dilute Si-C epitaxial layers on Si (100) substrates at 800°C with a RTCVD process using SiH4 and C3H8. C atoms can be kinetically stabilized in interstitial sites in the Si lattice at relatively high temperatures if process parameters, such as growth rate and C/Si flux ratio, are optimized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 255
Copyright
Copyright © Materials Research Society 1994

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References

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