Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-25T01:37:40.895Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Nanostructures in Si-Based Light-Emithing Devicesa

Published online by Cambridge University Press:  25 February 2011

Fereydoon Namavar ,
R.F. Pinizzotto ,
H. Yang ,
N. Kalkhoran  and
P. Maruska
Fereydoon Namavar
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA
R.F. Pinizzotto
Affiliation:
University of North Texas, Denton, TX
H. Yang
Affiliation:
University of North Texas, Denton, TX
N. Kalkhoran
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA
P. Maruska
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA
Get access

Abstract

High resolution cross-sectional electron microscopy and electron diffraction of an np heterojunction porous Si device, capable of emitting light at visible wavelengths, clearly indicates the presence of Si nanostructures within the quantum size regime. These results indicate that the quantum confinement effect is at least partially responsible for photoluminescence at visible wavelengths.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 343
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

a

This work was supported in part by SDIO and monitored by the U.S. Army Research Office

References

1. Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).CrossRefGoogle Scholar
2. Smith, R.L. and Collins, S.D., J. Appl. Phys. 71 8, R1 (1992).CrossRefGoogle Scholar
3. Richter, A., Lang, W., Steiner, P., Kozlowski, F., Sandmaier, H., MRS 256, 209 (1991).Google Scholar
4. Koshida, N. and Katsuno, M., Appl. Phys. Lett. 60, 347 (1992).Google Scholar
5. Futagi, T., Matsumoto, T., Katsuno, M., Ohta, Y., Mimura, H., Kitamura, K., MRS 283, 389 (1993).Google Scholar
6. Kalkhoran, N.M., Namavar, F., Maruska, H.P., MRS 256, 89 (1992).CrossRefGoogle Scholar
7. Namavar, F., Maruska, P., Kalkhoran, N., Appl. Phys. Lett. 60, 2514 (1992).Google Scholar
8. Maruska, H.P., Namavar, F., Kalkhoran, N.M., Appl. Phys. Lett. 61, 11 (1992).CrossRefGoogle Scholar
9. Maruska, H.P., Namavar, F., Kalkhoran, N.M., MRS 283, 383 (1993).Google Scholar
10. Takagi, H., Ogawa, H., Yamazaki, Y., Ishizaki, A., Nakagiri, T., APL 56 24, 2379 (1990).Google Scholar
11. Heinrich, J.L., Curtis, C.L., Credo, G.M., Kavanagh, K., Sailor, M.J., Science 253, (1991).Google Scholar
12. Searson, P.C., Appl. Phys. Lett. 59 (7), 832 (1991).Google Scholar
13. Cullis, A.G. and Canham, L.T., Nature 353, 335 (1991).CrossRefGoogle Scholar
14. Cole, M.W., Harvey, J.F., Lux, R.A., Eckart, D.W., Tsu, R., APL 60 (22), 2800 (1992).Google Scholar
15. Macaulay, J.M., Ross, F.M., Searson, P.C., Sputz, S.K., People, R., MRS 256, 47 (1992).Google Scholar
16. Shih, S., Jung, K.H., Hsieh, T.Y., Sarathy, J., Tsai, C., Li, K.-H., Campbell, J.C., Kwong, D.L., MRS 256 (1992).Google Scholar
17. Jung, K.H., Shih, S., Campbell, J.C., Kwong, D.L., MRS 256 (1992).Google Scholar
18. Xie, Y.H., Wilson, W.L., Ross, F.M., Mucha, J.A., Fitzgerald, E.A., MRS 256 (1992).Google Scholar
19. Cullis, A.G., Canham, L.T., Dossier, O.D., MRS 256 (1992).Google Scholar
20. Behrensmeier, R., Namavar, F., Amisola, G.B., Otter, F.A., Galligan, J.M., Appl. Phys. Lett. 62, 19 (1993).Google Scholar
21. t'Hooft, G.W. Kessener, Y.A.R.R., Rikken, G.L.J.A., Venhuizen, A.H.J. Appl. Phys. Lett. 61, 2344 (1992).Google Scholar
22. Nashashibi, T.S., Austin, I.G., Searle, T.M., Gibson, R.A., Spear, W.E., LeComber, P.G., Phil Mag. B45, 554 (1982).Google Scholar