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SiC TO SiC WAFER BONDING

Published online by Cambridge University Press:  11 February 2011

G. N. Yushin ,
A. V. Kvit ,
R. Collazo  and
Z. Sitar
G. N. Yushin
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695, U.S.A.
A. V. Kvit
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695, U.S.A.
R. Collazo
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695, U.S.A.
Z. Sitar
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695, U.S.A.
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Abstract

SiC wafers with an RMS roughness of 1.5 nm were bonded in a dedicated ultrahigh vacuum bonding chamber. Successful fusion of wafers was observed at temperatures as low as 800°C under a uniaxial mechanical stress of 20 MPa. Cross-section transmission electron microscopy (XTEM) of a specimen bonded at 1100°C revealed parts of the interface where wafers were in intimate contact, while other parts contained an up to 3 nm thick amorphous carbon interlayer. The bonded SiC retained its high crystalline quality; no extended defects emanating from the interface were observed within the sampling region. Electrical measurements showed that the azimuthal orientation of the bonded couple significantly influences the electrical character of the junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.5
Copyright
Copyright © Materials Research Society 2003

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References

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