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β-SiC MESFETs*
Published online by Cambridge University Press: 25 February 2011
Abstract
A β-SiC MESFET structure with functional DC characteristics has been fabricated and evaluated. The MESFET employs an epitaxial n on p SiC layer grown by chemical vapor deposition on a p-type Si(100) substrate. Modulation of the n-type channel current is achieved with a Au Schottky barrier gate. A transconductance of 2.3 mS/mm was obtained using a 5 micron gate length.
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- Copyright © Materials Research Society 1987
Footnotes
This work was sponsored by the Office of Naval Research
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