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Si3H8 Based Epitaxy of Biaxially Stressed Silicon Films Doped with Carbon and Arsenic for Cmos Applications

Published online by Cambridge University Press:  01 February 2011

M. Bauer ,
S. Zollner ,
N. D. Theodore ,
M. Canonico ,
P. Tomasini ,
B.-Y. Nguyen  and
C. Arena
M. Bauer
Affiliation:
ASM America Inc., 3440 East University Drive, 85034 Phoenix, Arizona, USA
S. Zollner
Affiliation:
Freescale Semiconductor, Inc., 2100 East Elliot Road, 85284 Tempe, Arizona, USA
N. D. Theodore
Affiliation:
Freescale Semiconductor, Inc., 2100 East Elliot Road, 85284 Tempe, Arizona, USA
M. Canonico
Affiliation:
Freescale Semiconductor, Inc., 2100 East Elliot Road, 85284 Tempe, Arizona, USA
P. Tomasini
Affiliation:
ASM America Inc., 3440 East University Drive, 85034 Phoenix, Arizona, USA
B.-Y. Nguyen
Affiliation:
Freescale Semiconductor, Inc., 2100 East Elliot Road, 85284 Tempe, Arizona, USA
C. Arena
Affiliation:
ASM America Inc., 3440 East University Drive, 85034 Phoenix, Arizona, USA
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Abstract

Arsenic doped Si:C films were grown epitaxially using Silcore® (Si3H8), methylsilane and arsine as source gases with growth rates up to 90 nm/min at 550°C. We observed a strong dependence of C and As incorporation on growth rate, caused by a growth rate dependent surface segregation behavior of C and As. High-resolution x-ray diffraction measurements of the epi layers reveal a perpendicular lattice constant as low as 5.323 Å. This corresponds to a biaxial stress of more than 2 GPa. Grazing exit (224) x-ray diffraction reciprocal space maps show the full tetragonal strain expected from the C content, suggesting that no relaxation of the films has occurred. Spectroscopic ellipsometry (SE) spectra were acquired in the 0.74 to 6.6 eV photon energy range. For intrinsic Si:C alloys, the E1 critical point shows the expected blueshift due to the alloying. For Si:C:As, a strong broadening of the E1 and E2 transitions exists, due to scattering of Bloch electrons in the crystal by As atoms. Additionally, free carrier effects lead to a decrease (increase) of the real (imaginary) part of the dielectric function in the near-infrared, consistent with a free carrier concentration in excess of 5×1020 cm-3. Transmission electron microscopy (TEM) of As doped Si:C films confirmed single-crystal epitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.30
Copyright
Copyright © Materials Research Society 2005

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