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Short period p-type AlN/AlGaN superlattices for deep UV light emitters
Published online by Cambridge University Press: 31 January 2011
Abstract
The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole concentration is ∼ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ∼ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.
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- Copyright © Materials Research Society 2010
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