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A semi-empirical model for electron mobility at the SiC/SiO2 interface

Published online by Cambridge University Press:  11 February 2011

Nelson S. Saks
Nelson S. Saks*
Affiliation:
Code 6813, Naval Research Laboratory, Washington D.C. 20375U.S.A., saks@nrl.navy.mil
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Abstract

The mobility of electrons in inversion layers at SiC/SiO2 interfaces μinv has been characterized in 4H- and 6H-SiC using Hall effect measurements. In order to understand the cause of the low mobilities typically observed in SiC MOS devices, a semi-empirical mobility model has been developed based on a previous model for silicon inversion layers. Using this model, two scattering mechanisms, surface phonon and Coulomb scattering from high densities of electrons trapped at the SiC/SiO2 interface, are found to account reasonably well for the behavior of the mobility. The model employs a changing density of trapped electrons as a function of gate voltage to accurately model Coulomb scattering. Surprisingly, evidence of surface roughness scattering is not observed in any SiC MOS device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K4.8
Copyright
Copyright © Materials Research Society 2003

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References

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