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Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon Layer
Published online by Cambridge University Press: 21 March 2011
Abstract
Silicon self–diffusion coefficients were measured in intrinsic and extrinsic silicon from870 to 1070°C using isotopically pure 30Si layer. 30Si diffusion profiles are determined by secondary ion mass spectrometry. The temperature dependence of intrinsic diffusion coefficient in bulk Si isobtained. Comparing it in heavily As-doped or B-doped Si, it is found that Si self-diffusion is entirely mediated by interstitialcy mechanism at lower temperatures below 870°C.
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- Copyright © Materials Research Society 2001
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