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Self-Compensation of Donors in GaAs Grown by MOCVD

Published online by Cambridge University Press:  25 February 2011

Gennady V. Andreyev  and
Vladimir M. Maslovsky
Gennady V. Andreyev
Affiliation:
Research Institute of Materials Science, Moscow 103460, Russia
Vladimir M. Maslovsky
Affiliation:
Zelenograd Research Institute of Physical Problems, Moscow 103460, Russia.
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Abstract

The variation of luminescence parameters with the tin dopant concentration is considered in GaAs epitaxial layers. It is shown that at typical growth conditions and absence of contamination the deep accepters are generated by self material so that the compensation coefficient (K=Na/Nd) of 0.25 is constant up to critical electron concentration of 2.1018cm−3. The self-compensation is realized by native point defect ofattice which is gallium vacancy. The gallium vacancy is arranged next to the every fourth donor at the distance of 7 A.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 43
Copyright
Copyright © Materials Research Society 1993

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References

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