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Self Terminating Reaction of Dipivaloylmethanate Complexes with Hydroxyl Groups on Oxide Surface

Published online by Cambridge University Press:  16 February 2011

Rika Sekine ,
Maki Kawai ,
Kiyotaka Asakura  and
Yasuhiro Iwasawa
Rika Sekine
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku Yokohama, 227, Japan and Institute of Physical and Chemical Research, Wako-shi, 351–01, Japan
Maki Kawai
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku Yokohama, 227, Japan and Institute of Physical and Chemical Research, Wako-shi, 351–01, Japan
Kiyotaka Asakura
Affiliation:
Department of Chemistry, Faculty of Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113, Japan
Yasuhiro Iwasawa
Affiliation:
Department of Chemistry, Faculty of Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113, Japan
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Abstract

We have already reported that copper and calcium dipivaloylmethanates [Cu(DPM)2 and Ca(DPM)2 ] reacts selectively and stoichiometrically with surface hydroxyl groups (OH) on SiO2. In order to clarify the structure of the adsorbed species and the origin of the reaction between M(DPM)2 (M=Cu and Ca) and OH groups, the surface adsorbed species are studied by infrared spectroscopy (IR), X-ray photoelectron spectroscopy (XPS), and the extended X-ray absorption fine structure (EXAFS). As a result, it was found that H from surface OH has moved into M(DPM)2 after the adsorption, where the four oxygen coordinated structure around Cu still exists in the adsorbed Cu(DPM)2. Introducing water vapor at 673 K to this surface results in the removal of ligand DPM from the adsorbed Cu(DPM)2. At 673 K, Cu atoms decomposed from the adsorbates aggregated on the surface. This fact supports that the interaction between the adsorbed Cu(DPM)2 and SiO2 surface is originated from that between the ligands and the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 333
Copyright
Copyright © Materials Research Society 1991

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References

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