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Selective Oxidation and Resistivity Reduction of Cu-Mn Alloy Films for Self-forming Barrier Process

Published online by Cambridge University Press:  01 February 2011

Jun Iijima ,
Yoshito Fujii ,
Koji Neishi  and
Junich Koike
Jun Iijima
Affiliation:
iijimajj@material.tohoku.ac.jp, Tohoku University, Department of Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan, +81-22-795-7360, +81-22-795-7360
Yoshito Fujii
Affiliation:
a7tm5333@stu.material.tohoku.ac.jp, Tohoku University, Department of Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
Koji Neishi
Affiliation:
neishi@material.tohoku.ac.jp, Tohoku University, Department of Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
Junich Koike
Affiliation:
koikej@material.tohoku.ac.jp, Tohoku University, Department of Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
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Abstract

Optimum conditions of annealing atmosphere and temperature for the reduction of Mn content from the Cu-Mn alloy layer in Cu-Mn self-forming barrier process were investigated. Mn was selectively oxidized at the surface by annealing in Ar gas containing an impurity level of O2 (<0.01ppm). Resistivity of the film was decreased to 2.0 μΩcm after annealing. On the other hand, internal oxidation of Cu-Mn alloy was observed with no external protective surface oxide layer in Ar containing more than 10 ppm of O2. An optimum oxygen concentration is found to be in between 0.01 and 10 ppm in 1atm of Ar gas at 350 °C.

Keywords

barrier layerCudevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N03-09
Copyright
Copyright © Materials Research Society 2008

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References

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