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Selective Growth of GaP on Si by Metal Organic Vapor Phase Epitaxy

Published online by Cambridge University Press:  10 February 2011

J. S. Lee ,
J. Salzman ,
D. Emerson ,
J. R. Shealy  and
J. M. Ballantyne
J. S. Lee
Affiliation:
School of Electrical Engineering, Cornell University, Phillips Hall, Ithaca, NY14853
J. Salzman
Affiliation:
On leave from Technion, 32000 Haifa, Israel
D. Emerson
Affiliation:
School of Electrical Engineering, Cornell University, Phillips Hall, Ithaca, NY14853
J. R. Shealy
Affiliation:
School of Electrical Engineering, Cornell University, Phillips Hall, Ithaca, NY14853
J. M. Ballantyne
Affiliation:
School of Electrical Engineering, Cornell University, Phillips Hall, Ithaca, NY14853
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Abstract

Extremely flat layers of GaP were grown on 4° miscut (100) Si substrates by selective Metal- Organic Vapor Phase Epitaxy. An enhancement of Re@3 was measured at the growth edges, which corresponds to a Sherwood number of 12.5. Defect-free growth is obtained at the edge of the silicon nitride mask. A gradual transition to growth with a large defect density is observed with increasing distance from the mask edges. In the defect free areas, a recovery of the (100) crystal plane is consistently measured on top of the grown mesas. This seems to indicate a pure layer-bylayer homoepitaxial mode (Frank-van der Merve mode) after the island mode nucleation (Volmer- Weber mode) on Silicon is completed, forming a thin smooth seed layer. High Resolution TEM shows a uniform Si-GaP transition. Micro-Raman Spectroscopy with spatial resolution of ˜1 micrometer was performed to assess the crystal quality as a function of the distance from the growth edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 301
Copyright
Copyright © Materials Research Society 1996

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