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Selective Epitaxy of Compound Semiconductors in Movpe Growth: Growth, Modelling, and Applications

Published online by Cambridge University Press:  28 February 2011

T.F. Kuech ,
M. Goorsky ,
A. Palevsky ,
P. Solomon  and
M.A. Tischler
T.F. Kuech
Affiliation:
IBM T..J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
M. Goorsky
Affiliation:
IBM T..J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
A. Palevsky
Affiliation:
IBM T..J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
P. Solomon
Affiliation:
IBM T..J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
M.A. Tischler
Affiliation:
IBM T..J.Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
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Abstract

Selective cpitaxial growth during metal-organic vapor phase epitaxy (MOVPE) can be accomplished over a wide range of growth conditions through the usC of alternative growth precursors. We have used chlorine-containing growth precursors, such as diethyl gallium chloride, (C2H5)2GaCl, to selectively grow GaAs and AlxGa1x As. The growth process has been thermodynamically modelled in order to estimate relative growth rates and alloy composition. This model indicates that near the growth front the growth process is chemically similar to the inorganic-based growth of compound semiconductors. This growth technique has been applied to the growth of extremely low resistance ohmic contact structures and quantum well structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 23
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Tanno, K., Endo, N., Kitajima, H., Kurogi, Y., and Tsuya, H., Jap. J. Appl. Phys. 21, L564 (1982).Google Scholar
2. Borland, J.O. and Drowley, C.I., Solid State Technology 28, 141 (1985).Google Scholar
3. Borland, J.O., Porc. 10th Inter. Conf. CVD, Honolulu, PV 87-88, 307 (1987).Google Scholar
4. Ginsberg, B., Bronncr, G., and Mader, S., Ext. Abstract, Electrochem. Soc. 87-2t 991 (1987).Google Scholar
5. Tausch, F.W. Jr., and Lapierrc, A.G., J. Electrochem. Soc. 112, 106 (1965).Google Scholar
6. Shaw, D.W., J. Electrochem. Soc. 113, 904 (1966).Google Scholar
7. Olscn, G.H. and Ban, V.S., Appl.Phys. Lett. 28, 142 (1976).Google Scholar
8. Kuech, T.F., Materilas Science Reports 2, I (1987).xsGoogle Scholar
9. Hienecke, H., Brauers, A., Grafahrend, F., Plass, C., Pbitz, N., Wcrncr, K., Weyers, M., and Luth, H., J.Crystal Growth 77, 303 (1986).Google Scholar
10. Duchemin, J.P., Bonnet, M., Koelsch, F., and Huyghe, D., J.Crystal Growth 45, 181 (1978).Google Scholar
11. Kamon, K., Takagashi, S., and Mori, H., J.Crystal Growth 73, 73 (1985).Google Scholar
12. Yoshida, M., Watanabe, H., and Uesugi, F., J. Electrochem. Soc. 132, 677 (1985).Google Scholar
13. Kuech, T.F., Wolford, D.J., Veuhoff, E., Deline, V., Mooney, P.M., Potemski, R., Bradley, J., J.Appl.Phys. 62, 632 (1987).Google Scholar
14. Buchan, N.I., private communication.Google Scholar
15. Kuech, T.F. in Advances in Materials, Processing and Devices in III-V Compound Semiconductors, edited by Sadana, D.K., Eastman, L., and Dupuis, R., (Mater. Res. Soc. Proc. 44, Pittsburgh, PA 1989) 41.Google Scholar
16. Cunningham, B.T., Haase, M.A., McCollum, M.J., Baker, I.E., and Stillman, G.E., Appl. Phys. Lett. 54, 1905 (1989).Google Scholar
17. Goorsky, M., Kuech, T.F. and Potemski, R., presented at the 1989 MRS Fall Meeting, Boston, MA 1989, to be published.Google Scholar
18. Kuech, T.F., Tischler, M.A., and Potemski, R., Appl. Phys. Lett. 54, 912 (1989).Google Scholar
19. Kuech, T.F., Tischler, M.A., Buchan, N.I., and Potemski, R., to be published J.Crystal Growth.Google Scholar
20. Hasagawa, F., Katayama, K., Kobayashi, R., Yamaguchi, H., and Nanannichi, Y., Jap..I. Appl. Phys. 27, L254 (1988).Google Scholar
21. Bachem, K.-H. and Heyen, M., J.Crystal Growth 55, 330 (1981).Google Scholar
22. Palevsky, A., Solomon, P., Kuech, T.F., and Tischler, M.A., Appl.Phys. Lett. 56 171 (1990).Google Scholar
23. Kuech, T.F., Marshall, E.D., Scilla, G.l., Potemski, R., Ransom, C.M., and Hung, M.Y., J. Crystal Growth 77, 539 (1986); and references therein.Google Scholar
24. Tischler, M.A., Kuech, T.F., Palevski, A., and Solomon, P., Appl. Phys. Lett. 55, 2214 (1989).Google Scholar