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Selected Area Epitaxial Regrowth of Amorphous Si/(100) Si Structures by Laser Annealing

Published online by Cambridge University Press:  28 February 2011

A. Christou ,
C. Varmazis ,
T. Efthimiopoulos  and
C. Fotakis
A. Christou
Affiliation:
Research Center of Crete, Institute of Electronic Structure and Laser University of Crete, Physics Department, Iraklio, P. 0. Box 470, Crete, Greece
C. Varmazis
Affiliation:
Research Center of Crete, Institute of Electronic Structure and Laser University of Crete, Physics Department, Iraklio, P. 0. Box 470, Crete, Greece
T. Efthimiopoulos
Affiliation:
Research Center of Crete, Institute of Electronic Structure and Laser University of Crete, Physics Department, Iraklio, P. 0. Box 470, Crete, Greece
C. Fotakis
Affiliation:
Research Center of Crete, Institute of Electronic Structure and Laser University of Crete, Physics Department, Iraklio, P. 0. Box 470, Crete, Greece
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Abstract

Excimer laser KrF (248 nm) annealing at 93 mj/cm2 and 175 mJ/cm2 has been found to recrystallize amorphous silicon on (100)Si. The major impurities introduced by excimer laser annealing are carbon, while surface roughness remains as a major problem. Channel mobilities measured on MOSFETs processed on epitaxially regrown silicon were 98-115 cm2/v.s. Leakage currents between recrystallized silicon regions were 1-2 uA/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 53
Copyright
Copyright © Materials Research Society 1985

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References

1. D'Heurle, F.M., Proc. 1st International Symposium on VLSI Science and Technology, Detroit, 1982.Google Scholar
2. Hayaski, T., Okamoto, H. and Homma, Y., Inst. of Phys. Conf. Ser. No. 57, 533 (1981).Google Scholar
3. Izumi, K., Omura, Y. and Sakai, T., Electronic Materials Conf. Colorado, June 1982.Google Scholar
4. Badawi, M. H., J. Phys. D. 10 19831 (1977).Google Scholar
5. Csepregi, L., Kennedy, E.F., Gallagher, T.J. and Mayer, J.W., J. Appl. Phys. 48, 4234 (1977).Google Scholar
6. Law, H.W., Pinizzotto, R. F., Yuan, H.T. and Bellavance, D.W., Electron. Lett. 17, 356 (1981).Google Scholar
7. Christou, A., Richmond, E.D., Wilkins, B.R. and Knudson, A.R., Appl. Phys. Lett. 44(8) 796 (1984).CrossRefGoogle Scholar
8. Sze, S.M., in Physics of Semiconductor Devices, Wiley Inc. New York (1981) pp. 431–473.Google Scholar