Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-25T13:40:21.492Z Has data issue: false hasContentIssue false
  • English
  • Français

Segmented Amorphous Silicon n-i-p Photodiodes on Stainless-Steel Foils for Flexible Imaging Arrays

Published online by Cambridge University Press:  01 February 2011

Yuriy Vygranenko ,
R. Kerr ,
K. H. Kim ,
J. H. Chang ,
D. Striakhilev ,
A. Nathan ,
G. Heiler  and
T. Tredwell
Yuriy Vygranenko
Affiliation:
yuriy@venus.uwaterloo.ca, University of Waterloo, E&CE, 200 University Ave West, Waterloo, N2L 3G1, Canada
R. Kerr
Affiliation:
timothy.tredwell@kodak.com, Eastman Kodak Company, Rochester, NY, 14650-23487, United States
K. H. Kim
Affiliation:
khkim@venus.uwaterloo.ca, University of Waterloo, Dept. of Electrical and Computer Engineering, 200 University Ave West, Waterloo, N2L 3G1, Canada
J. H. Chang
Affiliation:
jhchang@gmail.com, University of Waterloo, Dept. of Electrical and Computer Engineering, 200 University Ave West, Waterloo, N2L 3G1, Canada
D. Striakhilev
Affiliation:
dastriak@venus.uwaterloo.ca, University of Waterloo, Dept. of Electrical and Computer Engineering, 200 University Ave West, Waterloo, N2L 3G1, Canada
A. Nathan
Affiliation:
anathan@venus.uwaterloo.ca, University of Waterloo, Dept. of Electrical and Computer Engineering, 200 University Ave West, Waterloo, N2L 3G1, Canada
G. Heiler
Affiliation:
timothy.tredwell@kodak.com, Eastman Kodak Company, Rochester, NY, 14650-23487, United States
T. Tredwell
Affiliation:
timothy.tredwell@kodak.com, Eastman Kodak Company, Rochester, NY, 14650-23487, United States
Get access

Abstract

This paper reports the first successful attempt to fabricate amorphous silicon (a-Si:H) n-i-p photodiodes on a thin stainless-steel foil substrate for medical X-ray imaging applications. Two architectures of the n-i-p-photosensor, where the top electrode is based on amorphous or polycrystalline ITO, have been developed and characterized. The impact of critical fabrication steps including the deposition of semiconductor layers, dry etch of the NIP stack, diode passivation and encapsulation, as well as a contact formation on the device performance is presented and discussed. The test structures comprising segmented photodiodes with an active area ranged from 0.126 × 0.126 to 1 × 1 mm2 have been fabricated on stainless-steel foils and on glass substrates for the purposes of process characterization. The fabricated samples are evaluated in terms of current-voltage, capacitance-voltage, and spectral response characteristics.

Keywords

sensoramorphousplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A12-02
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Wu, M. and Wagner, S., Mater. Res. Soc. Symp. Proc. 664, A17.2 (2001).Google Scholar
2 Afentakis, T., Hatalis, M. K., Voutsas, A. T., and Hartzell, J. W., Mater. Res. Soc. Symp. Proc. 769, H2.5.1 (2003).Google Scholar
3 Cannella, V., Izu, M., Jones, S., Wagner, S., and Cheng, I.-C., Info. Displ., 24-27 (2005).Google Scholar
4 Kattamis, A. Z., Cheng, I-C., Hong, Y. and Wagner, S., Mater. Res. Soc. Symp. Proc. 910, A16–03 (2006).Google Scholar
5 Vygranenko, Y., Chang, J., and Nathan, A., IEEE J. Quantum Electron., 41, 5, 697–703 (2005).Google Scholar
6 Chang, J. H., Vygranenko, Y., and Nathan, A., J. Vac. Sci. Technol. A, 22, 971–974 (2004).Google Scholar
7 Theil, J. A., Mater. Res. Soc. Symp. Proc. 762, A.21.4.1 (2003).Google Scholar
8 Weisefield, R. L. et al. Proc. SPIE, 5368, 338 (2001).Google Scholar
9 Kramer, N. and Berkel, C. van, Appl. Phys. Lett. 64, 1129–1132 (1994).Google Scholar
10 Street, R. A. (Ed.), in Technology and Applications of Amorphous Silicon (Springer, Berlin, 2000) pp. 147–221.Google Scholar