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Schottky Barrier Heights at Singe Crystal Metal Semiconductor Interfaces

Published online by Cambridge University Press:  26 February 2011

R. T. Tung
R. T. Tung*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Electrical behavior at single crystal silicide-silicon interfaces was studied. Schottky barrier heights were determined for epitaxial NiSi2 and CoSi2 layers grown under ultrahigh vacuum conditions on (111), (100) and (110) surfaces of Si. A dependence of Schottky barrier heights on interface structure was observed. These results favor intrinsic mechanisms for Schottky barrier formation. The advantages of having homogeneous metal-semiconductor interfaces for the study of Schottky barrier mechanisms are pointed out. In particular, the present epitaxial silicide-silicon interfaces represent ideal candidates for detailed theoretical investigations based on experimentally obtained atomic structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 345
Copyright
Copyright © Materials Research Society 1985

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References

[1] Rhoderick, E. H., Metal-Semiconductor Contacts (Clarendon, New York, 1978).Google Scholar
[2] Brillson, L. J., Surf. Sci. Rep. 2, 123 (1982).CrossRefGoogle Scholar
[3] Williams, R. H., Contemp. Phys. 23, 329 (1982).CrossRefGoogle Scholar
[4] Schlüter, M., Thin Solid Films 93, 3 (1982).CrossRefGoogle Scholar
[5] Spicer, W. E., Lindau, I., Skeath, P. and Su, C. Y., J. Vac. Sci. Technol. 17, 1019 (1980).CrossRefGoogle Scholar
[6] Tung, R. T., Bean, J. C., Gibson, J. M., Poate, J. M. and Jacobson, D. C., Appl. Phys. Lett. 40, 684 (1982); and Thin Solid Films 93, 77 (1982).CrossRefGoogle Scholar
[7] Tung, R. T., Gibson, J. M., and Poate, J. M., Appl. Phys. Lett. 42, 888 (1983).CrossRefGoogle Scholar
[8] Gibson, J. M., Tung, R. T. and Poate, J. M., Mat. Res. Soc. Symp. Proc. 14, 395 (1983).CrossRefGoogle Scholar
[9] Tung, R. T., Gibson, J. M. and Poate, J. M., Phys. Rev. Lett. 50, 429 (1983).CrossRefGoogle Scholar
[10] Ishizaka, A., Nakagawa, K. and Shiraki, Y., 2nd International Symposium on Molecular Beam Epitaxy, Tokyo 1982, p. 183.Google Scholar
[11] Sze, S. M., Physics of Semiconductor Devices (Wiley-Interscience, New York, 1981).Google Scholar
[12] Andrews, J. M. and Lepselter, M. P., Solid State Electron. 13, 1011 (1970).CrossRefGoogle Scholar
[13] Norde, H., J. Appl. Phys. 50, 5052 (1979).CrossRefGoogle Scholar
[14] Tung, R. T., Phys. Rev. Lett. 52, 461 (1984) and J. Vac. Sci. Technol. B 2, 465 (1984).CrossRefGoogle Scholar
[15] Woodall, J. M., Pettit, G. D., Jackson, T. N., Lanza, C., Kavanagh, K. L. and Mayer, J. W., Phys. Rev. Lett. 51, 1783 (1983).CrossRefGoogle Scholar
[16] Chabal, Y. J., Hamann, D. R., Rowe, J. E. and Schlüter, M., Phys. Rev. B 25, 7598 (1982).CrossRefGoogle Scholar
[17] Schmid, P. E., Ho, P. S., Föll, H. and Tan, T. Y., Phys. Rev. B 28, 4593 (1983).CrossRefGoogle Scholar
[18] Harrison, T. R., Johnson, A. J., Tien, P. K. and Dayem, A. H., Appl. Phys. Lett. 41, 734 (1982).CrossRefGoogle Scholar
[19] Chiu, K. C. R., Poate, J. M., Rowe, J. E., Sheng, T. T. and Cullis, A. G., Appl. Phys. Lett. 38, 988 (1981).CrossRefGoogle Scholar
[20] Pimentel, C., Gibson, J. M. and Tung, R. T., to be published.Google Scholar
[21] Tung, R. T., Ng, K. K. and Gibson, J. M., to be published.Google Scholar
[22] Tung, R. T., Nakahara, S. and Boone, T., Appl. Phys. Lett. (1985).Google Scholar
[23] Gibson, J. M., Bean, J. C., Poate, J. M. and Tung, R. T., Appl. Phys. Lett. 41, 818 (1982).CrossRefGoogle Scholar
[24] Iwami, M., Okuno, K., Kamei, S., Ito, T., and Hiraki, A., Electrochem. Soc. Symp. Proc. 80–2, 102 (1980).Google Scholar
[25] Heine, V., Phys. Rev. A 138, 1689 (1965).CrossRefGoogle Scholar
[26] Louie, S. G. and Cohen, M. L., Phys. Rev. Lett. 35, 866 (1975).10.1103/PhysRevLett.35.866CrossRefGoogle Scholar
[27] Tersoff, J., Phys. Rev. Lett. 52, 465 (1984).CrossRefGoogle Scholar