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Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

Published online by Cambridge University Press:  01 February 2011

S. L. Liew ,
C. T. Chua ,
D. H. L Seng  and
D. Z. Chi
S. L. Liew
Affiliation:
sl-liew@imre.a-star.edu.sg, IMRE, OESC, 3 Research Link, Singapore, N/A, Singapore
C. T. Chua
Affiliation:
ct-chua@imre.a-star.edu.sg, Institue of Materials Research and Engineering, 3 Research Link, Singapore, 117602, Singapore
D. H. L Seng
Affiliation:
debbie-seng@imre.a-star.edu.sg, Institue of Materials Research and Engineering, 3 Research Link, Singapore, 117602, Singapore
D. Z. Chi
Affiliation:
dz-chi@imre.a-star.edu.sg, Institue of Materials Research and Engineering, 3 Research Link, Singapore, 117602, Singapore
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Abstract

Schottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates. was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.

Keywords

GedopantNi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F08-01
Copyright
Copyright © Materials Research Society 2007

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References

1. Trumbore, F. A., Bell Syst. Tech. J. 39, 205 (1960).Google Scholar
2. Stolwijk, N. A., in Impurities and Defects in Group IV Elements and III-V Compounds, edited by Schulz, M., Landolt-Börnstein, , New Series, Group III, Vol. 22A (Springer, Berlin, 1989).Google Scholar
3. Chi, D. Z., Lee, R. T. P., Chua, S. J., Lee, S. J., Ashok, S., and Kwong, D.-L., J. Appl. Phys. 97, 113706 (2005).Google Scholar
4. Lee, K. Y., Liew, S. L., Chua, S. J., Chi, D. Z., Sun, H. P., and Pan, X. Q., Mater. Res. Soc. Symp. Proc. 810, 55 (2004).Google Scholar
5. Yao, H. B., Tan, C. C., Liew, S. L., Chua, C. T., Chua, C. K., Li, R., Lee, R. T. P., Lee, S. J., and Chi, D.Z., Extended Abstracts of the Sixth International Workshop on Junction Technology (IWJT), China, pp. 164 (2006).Google Scholar
6. Shannon, J. M., Solid-State Electronics 19, 537 (1976).Google Scholar
7. Sze, S. M., Physics of Semiconductor Devices (p293–297), (Wiley, New York, 1981).Google Scholar
8. Kinoshita, Y. Tsuchiya, Yagishita, A., Uchida, K., 2004 Symposium on VLSI Technology, p168.Google Scholar
9. Zhang, M., Knoch, K., Zhao, Q. T., Lenk, St., Breuer, U., and Mantl, S., Proceedings of ESSDERC, (Grenoble, France, 2005) p457.Google Scholar
10. Chui, Chi On, Kulig, Leonard, Moran, Jean, and Tsai, Wilman, and Sarawat, Krishna C., APL. 87, 091909 (2005).Google Scholar