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Schottky Barrier Formation on Electron Beam Deposited Amorphous Si1−xGex:H alloys and Amorphous (Si/Si1−xGex):H Modulated Structures

Published online by Cambridge University Press:  26 February 2011

A. Christou ,
P. Tzanetakis ,
Z. Hatzopoulos  and
G. Kiriakidis
A. Christou
Affiliation:
Research Center of Crete and University of Crete, Physics Department, Heraklion, Crete, Greece.
P. Tzanetakis
Affiliation:
Research Center of Crete and University of Crete, Physics Department, Heraklion, Crete, Greece.
Z. Hatzopoulos
Affiliation:
Research Center of Crete and University of Crete, Physics Department, Heraklion, Crete, Greece.
G. Kiriakidis
Affiliation:
Research Center of Crete and University of Crete, Physics Department, Heraklion, Crete, Greece.
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Abstract

Amorphous Si:H and Si1−xGex:H films were prepared by mixing electron beam evaporated silicon with a molecular beam of germanium from a Knudsen cell and with a beam of ionized hydrogen produced by a 0–3 keV ion source. Aluminum Schottky barriers on two types of samples: (1) a-Si1−xGex:H with.15<×<.85 and (2) modulated structures of 50 × 100 Å layers of a-Si:H/a-Si.8Ge.2:H (10-5 Torr PH hydrogen) were investigated. Barrier height was found to depend on the Ge concentration and possible Fermi-level pinning due to the dangling bond deep level. The modulated structures showed a negative resistance region and a barrier height determined only by the composition of the first layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 521
Copyright
Copyright © Materials Research Society 1986

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References

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