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A Scanning Tunneling Microscopy Study of the Reduced Tio2(110)Surface

Published online by Cambridge University Press:  26 February 2011

Gregory S. Rohrer ,
Victor E. Henrich  and
Dawn A. Bonnell
Gregory S. Rohrer
Affiliation:
Department of Metallurgical Engineering and Materials Science, Carnegie Mellon University, Pittsburgh, PA, 15213
Victor E. Henrich
Affiliation:
Surface Science Laboratory, Department of Applied Physics, Yale University, New Haven, CT, 06520
Dawn A. Bonnell
Affiliation:
Dept. of Materials Science and Engineering, University of Pennsylvania,Philadelphia, PA, 19104
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Abstract

The scanning tunneling microscope has been used to image a reduced TiO2(110) surface in ultrahigh vacuum. Structural units with periodicities ranging from 21Å to 3.4Å have been clearly imaged and the observed surface structures can be explained by a model involving ordered arrangements of two dimensional defects known as crystallographic shear planes. An electronic state 0.5 eV below the conduction band edge, detected in tunneling spectra, has been assigned to reduced Ti cations which reside along the crystallographic shear planes. This state appears to be empty at the surface, possibly due to asmall amount of band bending. The results indicate that the topography of nonstoichiometric oxide surfaces can be rather complex and that the tunneling microscope provides an effective tool for studying the tomic scale surface features of wide band gap semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 611
Copyright
Copyright © Materials Research Society 1991

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References

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