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Rutherford Backscattering (RBS) and Channeling Studies of Defects in Arsenic Implanted Silicon Induced by Arsenic Clustering

Published online by Cambridge University Press:  26 February 2011

Frank A. Baiocchi  and
Avid Kamgar
Frank A. Baiocchi
Affiliation:
At&t Bell Laboratories, Murray Hill, New Jersey 07974
Avid Kamgar
Affiliation:
At&t Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

RBS/Channeling measurements have been used to characterize the Si recrystallization and As substitutionality of <100> Si wafers implanted with 100 keV As at two doses after multiple thermal anneals. It is found that low temperature thermal treatment after a high temperature rapid thermal anneal results in deactivation of the implant, presumably due to Arsenic clustering. The ion channeling results indicate the growth of a disordered layer in the silicon after the second anneal at a depth corresponding to the peak of the Arsenic implant concentration. The number of displaced Si atoms is found to be 5-10 times greater than the number of displaced As atoms. This indicates that both As clustering and growth of Si defects should be considered as possible mechanisms for the electrical deactivation of the implanted Si after post anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 115
Copyright
Copyright © Materials Research Society 1987

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References

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