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Room Temperature Local Tailoring of Electronic Properties of Hg1-xCdxTe by Application of an External Electric Field

Published online by Cambridge University Press:  03 September 2012

Konstantin Gartsman ,
Leonid Chernyak ,
Jean Marc Gilet ,
Robert Triboulet  and
David Cahen
Konstantin Gartsman
Affiliation:
Dept. Materials & Interfaces, Weizmann Inst. of Science, Rehovot 76100, Israel.
Leonid Chernyak
Affiliation:
Dept. Materials & Interfaces, Weizmann Inst. of Science, Rehovot 76100, Israel.
Jean Marc Gilet
Affiliation:
Dept. Materials & Interfaces, Weizmann Inst. of Science, Rehovot 76100, Israel.
Robert Triboulet
Affiliation:
Lab. Physique des Solides de CNRS, Meudon 92195, France.
David Cahen
Affiliation:
Dept. Materials & Interfaces, Weizmann Inst. of Science, Rehovot 76100, Israel.
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Abstract

Electronic properties of originally homogeneous samples of (Hg, Cd)Te, CuInSe2 and (CuAg)InSe2 have been modified on a local scale, in a stable manner, at room temperature, by reverse biasing of small area Schottky contacts on them. This is shown, after the bias voltage is lifted, by I-V measurements and by Electron Beam Induced Current scans. The creation of a clear diode-like, and, in the case of (CuAg)InSe2, transistor-like structure, in the vicinity of the Schottky contact, on a scale of about hundred um, could be explained by electromigration of electrically active ions and by the simultaneous generation of point and line defects. The latter type of defects is revealed for (Hg,Cd)Te by chemical etch, after application of the field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 809
Copyright
Copyright © Materials Research Society 1992

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References

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