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Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon

Published online by Cambridge University Press:  15 February 2011

S. Bidnyk ,
B. D. Little ,
Y. H. Cho ,
J. Krasinski ,
J. J. Song ,
W. Yang  and
S. A. McPherson
S. Bidnyk
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
B. D. Little
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
Y. H. Cho
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
J. Krasinski
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
J. J. Song
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
W. Yang
Affiliation:
Honeywell Technology Center, Plymouth, Minnesota 55441
S. A. McPherson
Affiliation:
Honeywell Technology Center, Plymouth, Minnesota 55441
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Abstract

Single and multi-mode room temperature laser action was observed in GaN pyramids under strong optical pumping. The 5- and 15-micron-wide hexagonal-based pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon substrate by metal-organic chemical vapor deposition. The pyramids were individually pumped, imaged, and spectrally analyzed through a high magnification optical system using a high density pulsed excitation source. We suggest that the cavity formed in a pyramid is of a ring type, formed by total internal reflections of light off the pyramids' surfaces. The mode spacing of the laser emission was found to be correlated to the size of pyramids. The effects of pyramid geometry and pulse excitation on the nature of laser oscillations inside of the pyramids is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.48
Copyright
Copyright © Materials Research Society 1999

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References

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