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Room Temperature Infrared Electroluminescence from Thin-Film Polycrystalline Chalcopyrite Cu(In,Ga)Se2-Based Diodes

Published online by Cambridge University Press:  26 February 2011

Miguel A. Contreras ,
John Webb ,
Andrew Tennant  and
Rommel Noufi
Miguel A. Contreras
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
John Webb
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Andrew Tennant
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Rommel Noufi
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
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Abstract

Evidence of room-temperature infrared electroluminescence from thin-film polycrystalline CuInxGa1-xSe2-based diodes (0<×<0.4) has been observed by Fourier transform spectroscopy using a FT-Raman spectrophotometer that operates in the near-infrared spectral region. Electroluminescence spectra from ternary CuInSe2 and quaternary Cu(In,Ga)Se2 device structures are reported. In all electroluminescence cases we observe an approximate linear relationship of intensity to forward junction current. Film fabrication process determines to a great extent the optoelectronic properties of the emitters, and consequently, the characteristics of their luminescence spectra. Using a Gaussian multi-peak curve-fit routine to analyze electroluminescence spectra, we can deduce the position, width and relative intensity of the dominant optical transitions. Our purpose in this contribution is two-fold: (1) To report the room-temperature electroluminescence phenomena from chalcopyrite Cu(In,Ga)Se2 polycrystalline thin-films, and (2) to demonstrate electroluminescence as a viable technique to optically characterize Cu(In,Ga)Se2 materials using diode structures at RT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 803
Copyright
Copyright © Materials Research Society 1995

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References

[1] Wasim, S.M., Solar Cells, 16 289 (1986).Google Scholar
[2] Rincón, C., Bellabarba, C., Gozález, J. and Pérez, G.S., Solar Cells, 16 335 (1986).Google Scholar
[3] Webb, J.D., Dunlavy, D.J., Ciszek, T., Ahrenkiel, R., Wanlass, M., Noufi, R., and Vernon, S., Mat. Res. Soc. Symp. Proc, 324 (1992).Google Scholar
[4] Albin, D.S., Carapella, J.J., Turtle, J.R., and Noufi, R., Mat. Res. Soc. Symp. Proc, 228 (1992).Google Scholar
[5] Jaffe, J.E. and Zunger, A., Physical Review B, 28, n. 10, 5822 (15 November 1983).Google Scholar
[6] Contreras, M., Turtle, J., Gabor, A., Tennant, A., Ramanathan, K., Asher, S., Franz, A., Keane, J., Wang, L., and Noufi, R.. Proceedings of the 1st World Conference in Photovolatic Energy Conversion, Hawaii, Dec 5–9 1994. (IEEE PVSC 1994) (to be published)Google Scholar
[7] Webb, J.D., Contreras, M., and Noufi, R., Proceedings of the Ist World Conference in Photovolatic Energy Conversion, Hawaii, Dec 5–9 1994. (IEEE PVSC 1994) (to be published)Google Scholar
[8] Physics of Semiconductor Devices, 2nd Edition. Sze, S.M., Wiley & Sons, 1981 p. 686 Google Scholar
[9] Gabor, A., Turtle, J., Albin, D., Contreras, M., Noufi, R. and Hermann, A., Appl. Phys. Lett. 65 (2), 198 (11 July 1994).Google Scholar
[10] Tanda, M., Manaka, S., Yamada, A., Konagai, M., and Takahashi, K., Jpn. J. Appl. Phys., 32 Pt. 1, No. 5A, 1913, (1993).Google Scholar
[11] Ricón, C., Bellabarba, C., Gonzáles, J., and Sánchez-Pérez, G., Solar Cells, 16 335 (1986).Google Scholar
[12] Bougnot, J., Duchemin, S. and Savelli, M., Solar Cells, 16 221 (1986).Google Scholar
[13] Walter, T., Menner, R., Ruckh, M., Kasër, L., and Schock, H.W., Proceedings of the 22nd IEEE PVSC, Las Vegas, Nevada, October 7–11, 1991, (IEEE, New York) p. 924.Google Scholar
[14] Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications. Shay and Wernick, (Intenational series of monographs in the science of the solid state, v. 7) Pergamon Press, 1975, p. 97Google Scholar