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The Role of Vacancies in Enhancing Oxygen Diffusion in Silicon

Published online by Cambridge University Press:  28 February 2011

A. S. Oates ,
R. C. Newman ,
J. M. Tucker ,
G. Davies  and
E. C. Lightowlers
A. S. Oates
Affiliation:
J.J. Thomson Physical Laboratory, University of Reading, Whiteknights, Reading RG6 2AF, U.K. Current address: A.T. & T. Bell Laboratories, Allentown, Penn.18103.
R. C. Newman
Affiliation:
J.J. Thomson Physical Laboratory, University of Reading, Whiteknights, Reading RG6 2AF, U.K.
J. M. Tucker
Affiliation:
J.J. Thomson Physical Laboratory, University of Reading, Whiteknights, Reading RG6 2AF, U.K.
G. Davies
Affiliation:
Physics Department, King's College, Strand, London WC2R 2LS, U.K.
E. C. Lightowlers
Affiliation:
Physics Department, King's College, Strand, London WC2R 2LS, U.K.
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Abstract

Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction during electron irradiation of stress-induced dichroism in the 9μm oxygen band is shown to occur by sequential capture of a vacancy and a self-interstitial at the oxygen for irradiations carried out between 25 and 280°C. At higher temperatures repetitive capture and release of vacancies at oxygen atoms appears to dominate in the oxygen migration process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 59
Copyright
Copyright © Materials Research Society 1986

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References

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