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Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

Published online by Cambridge University Press:  11 February 2011

E. Kuokstis ,
C. Q. Chen ,
M. E. Gaevski ,
W. H. Sun ,
J. W. Yang ,
G. Simin ,
M. Asif Khan ,
H. P. Maruska ,
D. W. Hill  and
M. M. C. Chou
...Show all authors
E. Kuokstis
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
C. Q. Chen
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
M. E. Gaevski
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
W. H. Sun
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
J. W. Yang
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
G. Simin
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
M. Asif Khan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
H. P. Maruska
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, U.S.A.
D. W. Hill
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, U.S.A.
M. M. C. Chou
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, U.S.A.
J. J. Gallagher
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, U.S.A.
B. H. Chai
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, U.S.A.
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Abstract

The comparative study of photoluminescence (PL) dynamics of wurtzite-type GaN/AlGaN multiple quantum wells (MQWs) fabricated using low-pressure metalorganic chemical vapor deposition technique over GaN coated [0001]-sapphire (C-plane) and single crystalline [1100]-oriented freestanding GaN (M-plane) substrates is presented. The MQWs on C-plane sapphire at low excitation exhibited much lower (∼30 times) PL intensity in comparison with M-plane samples. The C-plane MQWs showed a strong excitation intensity-induced PL spectrum line blueshift (up to 140 meV). Meanwhile identical MQW structures on M-plane substrates demonstrated no PL peak shifts indicating an absence of polarization fields. At higher excitation (>50 kW/cm2) the PL intensity and spectra peak positions for both the C- and the M-plane MQWs become nearly the same and do not differ with subsequent increase of pumping. Theoretical analysis and comparison with PL experimental data revealed strong (up to ∼1.2–1.3 MV/cm) built-in electrostatic fields in the C-plane structures whereas M-plane structures are almost non-polar.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L5.3
Copyright
Copyright © Materials Research Society 2003

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References

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