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The role of interfaces in thin-film CdTe solar cells

Published online by Cambridge University Press:  01 February 2011

M. J. Romero ,
T. A. Gessert ,
M. M. Al-Jassim ,
R. G. Dhere ,
D.S. Albin  and
H. R. Moutinho
M. J. Romero
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393 Phone: 303-384-6653, Fax: 303-384-6604, Email: mromero@nrel.gov
T. A. Gessert
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393 Phone: 303-384-6653, Fax: 303-384-6604, Email: mromero@nrel.gov
M. M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393 Phone: 303-384-6653, Fax: 303-384-6604, Email: mromero@nrel.gov
R. G. Dhere
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393 Phone: 303-384-6653, Fax: 303-384-6604, Email: mromero@nrel.gov
D.S. Albin
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393 Phone: 303-384-6653, Fax: 303-384-6604, Email: mromero@nrel.gov
H. R. Moutinho
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393 Phone: 303-384-6653, Fax: 303-384-6604, Email: mromero@nrel.gov
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Abstract

Thin-film CdTe solar cells are very promising for future cost-effective photovoltaics. The photovoltaic effect in these cells is based on the extraction of photoexcited carriers by the field provided by the CdTe/CdS heterojunction. An additional interface with non-rectifying characteristics is needed to close the external circuit on the other side of the CdTe thin film. Finally, the transport of photoexcited carriers is influenced by the presence of grain boundaries (GBs). In this contribution, we investigate several aspects of these interfaces and their effects on the operation of CdTe solar cells by electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.40
Copyright
Copyright © Materials Research Society 2002

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