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Role of Interface Quality and Film Doping Density in Amorphous Si / Crystalline Si Heterojunctions for Photovoltaic Applications

Published online by Cambridge University Press:  01 February 2011

M. Farrokh Baroughi  and
S. Sivoththaman
M. Farrokh Baroughi
Affiliation:
Department of Electrical & Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
S. Sivoththaman
Affiliation:
Department of Electrical & Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
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Abstract

We have studied some key aspects of the (n+)a-Si/(p)c-Si heterojunction structures photovoltaic applications. The importance of the hetero-interface quality has been studied by both theoretical simulations and experimental characterization. The surface treatment prior to the film deposition is very critical. Even though H-plasma passivation can help passivate bulk defects in low quality Si, extreme care should be taken to avoid plasma induced surface damage which will result in a defective hetero-interface. Furthermore, (n+) a-Si films with different doping levels have also been characterized and their influence on the device performance has been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V2.11
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Taguchi, M., Kawamoto, K., Tsuge, S., Baba, T., Sakata, H., Morizane, M., Uchihashi, K., Nakamura, N., Kiyama, S. and Oota, O., Pro. Photovolt. Res. Appl 8, 503 (2000).Google Scholar
2. Roca, F., Sinno, G., Francia, G. D., Prosini, P., Fameli, G., Grillo, P., Citarella, A., Pascarella, F., and Sala, D., Solar energy materials and solar cells 48, 15 (1997)Google Scholar
3. Jensen, N., Hausner, R. M., Bergmann, R. B., Werner, J. H. and Rau, U., Prog. Photovolt: Res. Appl., 10, 1 (2002)Google Scholar
4. Jagannathan, B., Anderson, W. A., Coleman, J., Sol. En. Mat. & Sol. Cell., 46, p. 289.Google Scholar
5. Matsuura, H., Okuno, T., Okusi, H. and Tanaka, K., J. Appl. Phys., 55 (4), 1984 Google Scholar
6. Van Cleef, M. W., Philippens, M.W., Rubinelli, F. A., Kolter, M. and Schropp, R. E. I., Mat. Res. Soc. Symp. Proc., 420, 239 (1996)Google Scholar
7. Baroughi, M.F., Jeyakumar, R., Vygranenko, Y., Khalvati, F. and Sivoththaman, S., J. Vac. Sci. Technl. A, 2004, to be published.Google Scholar